Microstructure of laterally overgrown GaN layers

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Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing ... continued below

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Liliental-Weber, Zuzanna & Cherns, David April 3, 2001.

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Transmission electron microscopy study of plan-view and cross-section samples of epitaxial laterally overgrown (ELOG) GaN samples is described. Two types of dislocation with the same type of Burgers vector but different line direction have been observed. It is shown that threading edge dislocations bend to form dislocation segments in the c-plane as a result of shear stresses developed in the wing material along the stripe direction. It is shown that migration of these dislocations involves both glide and climb. Propagation of threading parts over the wing area is an indication of high density of point defects present in the wing areas on the ELOG samples. This finding might shed new light on the optical properties of such samples.

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OSTI as DE00835807

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  • Journal Name: Journal of Applied Physics; Journal Volume: 89; Journal Issue: 12; Other Information: Submitted to Journal of Applied Physics: Volume 89, No.12; Journal Publication Date: 06/15/2001

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  • Report No.: LBNL--47688
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 835807
  • Archival Resource Key: ark:/67531/metadc783326

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  • April 3, 2001

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  • Dec. 3, 2015, 9:30 a.m.

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  • June 22, 2016, 6:34 p.m.

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Liliental-Weber, Zuzanna & Cherns, David. Microstructure of laterally overgrown GaN layers, article, April 3, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc783326/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.