Ohmic Contacts to n-type GaSb and n-type GaInAsSb

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Description

An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on both n-GaSb and semi-insulating GaAs substrates. These samples were fabricated into mesa-etched TLM structures, and the specific contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific contact resistivities of about 2 x 10{sup -6} {Omega}-cm{sup 2} and sheet resistances of about 4 {Omega}/{open_square} are found for n-type GaInAsSb doped at about 3 x 10{sup 18} cm{sup -3}.

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1740 Kilobytes pages

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Huang, R.K.; Wang, C.A.; Harris, C.T.; Connors, M.K. & Shiau, D.A. June 16, 2003.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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Description

An investigation with the objective of improving n-type ohmic contacts to GaSb-based devices is described. This study involves a series of n-GaInAsSb and n-GaSb samples with varying doping, grown on both n-GaSb and semi-insulating GaAs substrates. These samples were fabricated into mesa-etched TLM structures, and the specific contact resistivity and sheet resistance of these layers as a function of majority electron concentration were measured. Extremely low specific contact resistivities of about 2 x 10{sup -6} {Omega}-cm{sup 2} and sheet resistances of about 4 {Omega}/{open_square} are found for n-type GaInAsSb doped at about 3 x 10{sup 18} cm{sup -3}.

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1740 Kilobytes pages

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OSTI as DE00822096

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  • Other Information: PBD: 16 Jun 2003

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  • Report No.: LM-03K059
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/822096 | External Link
  • Office of Scientific & Technical Information Report Number: 822096
  • Archival Resource Key: ark:/67531/metadc782960

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  • June 16, 2003

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 8:52 p.m.

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Huang, R.K.; Wang, C.A.; Harris, C.T.; Connors, M.K. & Shiau, D.A. Ohmic Contacts to n-type GaSb and n-type GaInAsSb, report, June 16, 2003; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc782960/: accessed August 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.