Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report

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Description

It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.

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Tamargo, M. C. & Neumark, G. F. April 19, 2004.

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Description

It is well known that it has been difficult to obtain good bipolar doping in a wide bandgap semiconductors. Developed a new doping technique, involving use of a standard dopant, together with a ''co-dopant'' used to facilitate the introduction of the dopant, and have vastly alleviated this problem.

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vp.

Notes

OSTI as DE00824891

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  • Other Information: PBD: 19 Apr 2004

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  • Report No.: DOE/ER/45695-1
  • Grant Number: FG02-98ER45695
  • DOI: 10.2172/824891 | External Link
  • Office of Scientific & Technical Information Report Number: 824891
  • Archival Resource Key: ark:/67531/metadc782829

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  • April 19, 2004

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  • Dec. 3, 2015, 9:30 a.m.

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  • Aug. 5, 2016, 3:34 p.m.

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Tamargo, M. C. & Neumark, G. F. Non-equilibrium Approach to Doping of Wide Bandgap materials by Molecular Beam Epitaxy. Final Report, report, April 19, 2004; United States. (digital.library.unt.edu/ark:/67531/metadc782829/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.