Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications

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Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type ... continued below

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Cao, Y.; Zhang, J.; Li, X.; Kosel, T.H.; Fay, P.; Hall, D.C. et al. September 1, 2004.

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Data are presented on the insulating properties and capacitance-voltage (CV) characteristics of metal-oxide-semiconductor (MOS) device-thickness (below approx. 100 nm) native oxides formed by wet thermal oxidation of thin InAlP epilayers lattice matched to GaAs. Low leakage current densities of J=1.4 x 10-9 A/cm2 and J=8.7 x 10-11 A/cm2 are observed at an applied field of 1 MV/cm for MOS capacitors fabricated with 17 nm and 48 nm oxides, respectively. TEM images show that the In-rich interfacial particles which exist in 110 nm oxides are absent in 17 nm oxide films. Quasi-static capacitance-voltage measurements of MOS capacitors fabricated on both n-type and p-type GaAs show that the InAlP oxide-GaAs interface is sufficiently free of traps to support inversion, indicating an unpinned Fermi level. These data suggest that InAlP native oxides may be a viable insulator for GaAs MOS device applications.

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  • Other Information: Journal Publication Date: 10/15/2004

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  • Report No.: LBNL--58242
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 842809
  • Archival Resource Key: ark:/67531/metadc782711

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  • September 1, 2004

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  • Dec. 3, 2015, 9:30 a.m.

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  • Dec. 12, 2016, 5:47 p.m.

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Cao, Y.; Zhang, J.; Li, X.; Kosel, T.H.; Fay, P.; Hall, D.C. et al. Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications, article, September 1, 2004; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc782711/: accessed September 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.