Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb

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This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s.

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2262 Kilobytes pages

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Donetsky, D; Anikeev, S; Gu, N; Belenky, G; Luryi, S; Wang, CA et al. June 9, 2004.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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Description

This work summarizes recent data on minority carrier lifetime in n- and p-type double heterostructures (DHs) of 0.5-0.6 eV GaInAsSb confined with GaSb and AlGaAsSb cap layers. Recombination times were measured by time-resolved photoluminescence (TRPL) and by optical frequency response (OFR) to sinusoidal excitation. It was shown that one of the mechanisms responsible for interface recombination in GaSb/GaInAsSb/GaSb DHs is thermionic emission of carriers over the heterobarrier. Considerable improvement of carrier confinement was obtained with 1 eV AlGaAsSb cap layers. Optimization of the epitaxial growth resulted in a recombination velocity at GaInAsSb/AlGaAsSb interface as low as 30 cm/s.

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2262 Kilobytes pages

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OSTI as DE00837455

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  • Other Information: PBD: 9 Jun 2004

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  • Report No.: LM-04K044
  • Grant Number: AC 12-00-SN39357
  • DOI: 10.2172/837455 | External Link
  • Office of Scientific & Technical Information Report Number: 837455
  • Archival Resource Key: ark:/67531/metadc782436

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  • June 9, 2004

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 8:43 p.m.

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Donetsky, D; Anikeev, S; Gu, N; Belenky, G; Luryi, S; Wang, CA et al. Analysis of Recombination Processes in 0.5-0.6 eV Epitaxial GaInAsSb Lattice-matched to GaSb, report, June 9, 2004; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc782436/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.