Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices

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Description

High-performance GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices with quantum efficiency and fill factor near theoretical limits and open-circuit voltage within about 15% of the limit can be routinely fabricated. To achieve further improvements in TPV device performance, detailed materials studies of GaInAsSb epitaxial growth, the microstructure, and minority carrier lifetime, along with device structure considerations are reported. This paper discusses the materials and device issues, and their implications on TPV device performance. In addition, improvements in TPV performance with integrated distributed Bragg reflectors and back-surface reflectors are discussed.

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4718 Kilobytes pages

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Wang, C.A.; Vineis, C.J.; Choi, H.K.; Connors, M.K.; Huang, R.H.; Daielson, L.R. et al. September 19, 2002.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 22 times . More information about this report can be viewed below.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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Description

High-performance GaInAsSb/AlGaAsSb/GaSb thermophotovoltaic (TPV) devices with quantum efficiency and fill factor near theoretical limits and open-circuit voltage within about 15% of the limit can be routinely fabricated. To achieve further improvements in TPV device performance, detailed materials studies of GaInAsSb epitaxial growth, the microstructure, and minority carrier lifetime, along with device structure considerations are reported. This paper discusses the materials and device issues, and their implications on TPV device performance. In addition, improvements in TPV performance with integrated distributed Bragg reflectors and back-surface reflectors are discussed.

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4718 Kilobytes pages

Notes

OSTI as DE00821862

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  • Other Information: PBD: 19 Sep 2002

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  • Report No.: LM-02K092
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/821862 | External Link
  • Office of Scientific & Technical Information Report Number: 821862
  • Archival Resource Key: ark:/67531/metadc782207

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  • September 19, 2002

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 8:51 p.m.

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Wang, C.A.; Vineis, C.J.; Choi, H.K.; Connors, M.K.; Huang, R.H.; Daielson, L.R. et al. Lattice-Matched GaInAsSb/A1GaAsSb/GaSb Materials for Thermophotovoltaic Devices, report, September 19, 2002; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc782207/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.