Proton irradiation effects on 2Gb flash memory

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The authors report total ionizing dose and single event effects on 2Gb Samsung flash memory devices after exposure to 200 MeV protons to various doses up to 83 krad(Si). They characterize observed failures and single event upsets on 22 devices from two different lots. Devices from both lots are robust to greater than 20 krad(Si) although they see evidence for lot-to-lot variation where only one lot appears robust up to about 50 krad(Si). Single event upsets are observed at a relatively low rate and are consistent with single isolated bit flips within registers that transfer bits to and from the ... continued below

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395 Kilobytes

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Wester, William; Nelson, Charles & Marriner, John August 18, 2004.

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The authors report total ionizing dose and single event effects on 2Gb Samsung flash memory devices after exposure to 200 MeV protons to various doses up to 83 krad(Si). They characterize observed failures and single event upsets on 22 devices from two different lots. Devices from both lots are robust to greater than 20 krad(Si) although they see evidence for lot-to-lot variation where only one lot appears robust up to about 50 krad(Si). Single event upsets are observed at a relatively low rate and are consistent with single isolated bit flips within registers that transfer bits to and from the flash memory cells.

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395 Kilobytes

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  • IEEE NSREC Conference Record

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  • Report No.: FERMILAB-Conf-04-143-E
  • Grant Number: AC02-76CH03000
  • Office of Scientific & Technical Information Report Number: 828162
  • Archival Resource Key: ark:/67531/metadc782196

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  • August 18, 2004

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  • Dec. 3, 2015, 9:30 a.m.

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  • Aug. 5, 2016, 6:32 p.m.

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Wester, William; Nelson, Charles & Marriner, John. Proton irradiation effects on 2Gb flash memory, article, August 18, 2004; Batavia, Illinois. (digital.library.unt.edu/ark:/67531/metadc782196/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.