Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy

PDF Version Also Available for Download.

Description

Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

Creation Information

Fang, Z.-Q.; Look, D.C.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z. & Molnar, R.J. April 18, 2001.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 20 times . More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.

Source

  • Journal Name: Applied Physics Letters; Journal Volume: 78; Journal Issue: 3; Related Information: Journal Publication Date: 01/15/2001

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL--47764
  • Grant Number: DE-AC02-05CH11231
  • DOI: 10.1063/1.1338970 | External Link
  • Office of Scientific & Technical Information Report Number: 860729
  • Archival Resource Key: ark:/67531/metadc779959

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • April 18, 2001

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

Description Last Updated

  • April 1, 2016, 7:33 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 20

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Fang, Z.-Q.; Look, D.C.; Jasinski, J.; Benamara, M.; Liliental-Weber, Z. & Molnar, R.J. Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy, article, April 18, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc779959/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.