Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices

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GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage ... continued below

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Wang, C.A.; Shiau, D.A.; Murphy, P.G.; O'brien, P.W.; Huang, R.K.; Connors, M.K. et al. June 16, 2003.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 35 times . More information about this report can be viewed below.

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  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

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GaInAsSb/AlGaAsSb/InAsSb/GaSb epitaxial layers were bonded to semi-insulating GaAs handle wafers with SiO{sub x}/Ti/Au as the adhesion layer for monolithic interconnection of thermophotovoltaic (TPV) devices. Epitaxial transfer was completed by removal of the GaSb substrate, GaSb buffer, and InAsSb etch-stop layer by selective chemical etching. The SiO{sub x}/TiAu provides not only electrical isolation, but also high reflectivity and is used as an internal back-surface reflector. Characterization of wafer-bonded epitaxy by high-resolution x-ray diffraction and time-decay photoluminescence indicates minimal residual stress and enhancement in optical quality. 0.54-eV GaInAsSb cells were fabricated and monolithically interconnected in series. A 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.

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1031 Kilobytes pages

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OSTI as DE00821870

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  • Other Information: PBD: 16 Jun 2003

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  • Report No.: LM-03K061
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/821870 | External Link
  • Office of Scientific & Technical Information Report Number: 821870
  • Archival Resource Key: ark:/67531/metadc779879

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  • June 16, 2003

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  • Dec. 3, 2015, 9:30 a.m.

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  • April 28, 2016, 9:44 p.m.

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Wang, C.A.; Shiau, D.A.; Murphy, P.G.; O'brien, P.W.; Huang, R.K.; Connors, M.K. et al. Wafer Bonding and Epitaxial Transfer of GaSb-based Epitaxy to GaAs for Monolithic Interconnection of Thermophotovoltaic Devices, report, June 16, 2003; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc779879/: accessed August 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.