Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy

PDF Version Also Available for Download.

Description

The effects of growth interruption on the quality of GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor phase epitaxy are reported. In-situ reflectance monitoring and ex-situ characterization by high-resolution x-ray diffraction, 4K photoluminescence (PL), and time-resolved PL indicate that GaInAsSb is extremely sensitive to growth interruption time as well as the ambient atmosphere during interruption. By optimizing the interruption sequence, surface recombination velocity as low as 20 cm/s was achieved for GaInAsSb/AlGaAsSb double heterostructures.

Physical Description

384 Kilobytes pages

Creation Information

Wang, CA; Shiau, DA; Donetsky, D; Anikeev, S; Belenky, G & Luryi, S April 29, 2004.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 17 times . More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Sponsor

Publisher

  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

The effects of growth interruption on the quality of GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor phase epitaxy are reported. In-situ reflectance monitoring and ex-situ characterization by high-resolution x-ray diffraction, 4K photoluminescence (PL), and time-resolved PL indicate that GaInAsSb is extremely sensitive to growth interruption time as well as the ambient atmosphere during interruption. By optimizing the interruption sequence, surface recombination velocity as low as 20 cm/s was achieved for GaInAsSb/AlGaAsSb double heterostructures.

Physical Description

384 Kilobytes pages

Notes

OSTI as DE00824868

Source

  • Other Information: PBD: 29 Apr 2004

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Report No.: LM-04K027
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/824868 | External Link
  • Office of Scientific & Technical Information Report Number: 824868
  • Archival Resource Key: ark:/67531/metadc779594

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • April 29, 2004

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

Description Last Updated

  • April 28, 2016, 8:43 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 17

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Wang, CA; Shiau, DA; Donetsky, D; Anikeev, S; Belenky, G & Luryi, S. Effect of Growth Interruption on Surface Recombination Velocity in GaInAsSb/AlGaAsSb Heterostructures Grown by Organometallic Vapor Phase Epitaxy, report, April 29, 2004; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc779594/: accessed August 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.