Growth of Quantum Wires on Step-Bunched Substrate

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This proposal initiates a combined theoretical and experimental multidisciplinary research effort to explore a novel approach for growing metallic and magnetic nanowires on step-bunched semiconductor and dielectric substrates, and to lay the groundwork for understanding the growth mechanisms and the electronic, electrical, and magnetic properties of metallic and magnetic nanowires. The research will focus on four topics: (1) fundamental studies of step bunching and self-organization in a strained thin film for creating step-bunched substrates. (2) Interaction between metal adatoms (Al,Cu, and Ni) and semiconductor (Si and SiGe) and dielectric (CaF2) surface steps. (3) growth and characterization of metallic and magnetic ... continued below

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Liu, Feng February 1, 2005.

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Description

This proposal initiates a combined theoretical and experimental multidisciplinary research effort to explore a novel approach for growing metallic and magnetic nanowires on step-bunched semiconductor and dielectric substrates, and to lay the groundwork for understanding the growth mechanisms and the electronic, electrical, and magnetic properties of metallic and magnetic nanowires. The research will focus on four topics: (1) fundamental studies of step bunching and self-organization in a strained thin film for creating step-bunched substrates. (2) Interaction between metal adatoms (Al,Cu, and Ni) and semiconductor (Si and SiGe) and dielectric (CaF2) surface steps. (3) growth and characterization of metallic and magnetic nanowires on step-bunched templates. (4) fabrication of superlattices of nanowires by growing multilayer films. We propose to attack these problems at both a microscopic and macroscopic level, using state-of-the-art theoretical and experimental techniques. Multiscale (electronic-atomic-continuum) theories will be applied to investigate growth mechanisms of nanowires: mesoscopic modeling and simulation of step flow growth of strained thin films, in particular, step bunching and self-organization will be carried out within the framework of continuum linear elastic theory; atomistic calculation of interaction between metal adatoms and semiconductor and dielectric surface steps will be done by large-scale computations using first-principles total-energy methods. In parallel, thin films and nanowires will be grown by molecular beam epitaxy (MBE), and the resultant structure and morphology will be characterized at the atomic level up to micrometer range, using a combination of different surface/interface probes, including scanning tunneling microscopy (STM, atomic resolution), atomic force microscopy (AFM, nanometer resolution), low-energy electron microscopy (LEEM, micrometer resolution), reflectance high-energy electron diffraction (RHEED), and x-ray diffraction. Finally, the electronic, electrical, and magnetic properties of the thin films and nanowires will be explored by both theory and experiment.

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  • Report No.: DOE/ER/45875
  • Grant Number: FG03-01ER45875
  • DOI: 10.2172/836577 | External Link
  • Office of Scientific & Technical Information Report Number: 836577
  • Archival Resource Key: ark:/67531/metadc779388

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Creation Date

  • February 1, 2005

Added to The UNT Digital Library

  • Dec. 3, 2015, 9:30 a.m.

Description Last Updated

  • Nov. 28, 2016, 7:30 p.m.

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Liu, Feng. Growth of Quantum Wires on Step-Bunched Substrate, report, February 1, 2005; United States. (digital.library.unt.edu/ark:/67531/metadc779388/: accessed December 12, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.