Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding

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Transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) studies of GaAs/GaN interfaces, obtained by direct wafer bonding, are presented. TEM observations show that most of the interface area was well bonded. A thin oxide layer, confirmed by EDX, was present at the interface in the well-bonded regions. Plan-view TEM studies showed the presence of two dislocation networks in such regions. They formed to accommodate: (1) tilt between bonded crystals and (2) strain, which appeared during sample cooling due to mismatch in thermal expansion coefficients. Asymmetrical, often elongated, cavities, formed on the GaAs side, were present at the interface ... continued below

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6 pages

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Jasinski, J.; Liliental-Weber, Z.; Estrada, S. & Hu, E. April 30, 2002.

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Description

Transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX) studies of GaAs/GaN interfaces, obtained by direct wafer bonding, are presented. TEM observations show that most of the interface area was well bonded. A thin oxide layer, confirmed by EDX, was present at the interface in the well-bonded regions. Plan-view TEM studies showed the presence of two dislocation networks in such regions. They formed to accommodate: (1) tilt between bonded crystals and (2) strain, which appeared during sample cooling due to mismatch in thermal expansion coefficients. Asymmetrical, often elongated, cavities, formed on the GaAs side, were present at the interface between the well-bonded regions. It was shown by EDX that the walls of these cavities are covered with native oxide.

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6 pages

Notes

OSTI as DE00795386

Source

  • 2002 MRS Spring Meeting, San Francisco, CA (US), 04/01/2002--04/05/2002; Other Information: Supercedes report DE00795386; PBD: 30 Apr 2002;Materials Research Society Symposium Proceedings Vol. 722, pp. 205-210, 2002

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  • Report No.: LBNL--50188
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 795386
  • Archival Resource Key: ark:/67531/metadc742417

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  • April 30, 2002

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 2:39 p.m.

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Jasinski, J.; Liliental-Weber, Z.; Estrada, S. & Hu, E. Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding, article, April 30, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc742417/: accessed August 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.