Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system

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A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS ... continued below

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Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L. & Wilde, S. May 31, 2002.

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A proof-of-principle ion projection lithography (IPL) system called Maskless Micro-ion beam Reduction Lithography (MMRL) has been developed and tested at the Lawrence Berkeley National Laboratory (LBNL) for future integrated circuits (ICs) manufacturing and thin film media patterning [1]. This MMRL system is aimed at completely eliminating the first stage of the conventional IPL system [2] that contains the complicated beam optics design in front of the stencil mask and the mask itself. It consists of a multicusp RF plasma generator, a multi-beamlet pattern generator, and an all-electrostatic ion optical column. Results from ion beam exposures on PMMA and Shipley UVII-HS resists using 75 keV H+ are presented in this paper. Proof-of-principle electronic pattern switching together with 10x reduction ion optics (using a pattern generator made of nine 50-{micro}m switchable apertures) has been performed and is reported in this paper. In addition, the fabrication of a micro-fabricated pattern generator [3] on an SOI membrane is also presented.

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INIS; OSTI as DE00799568

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  • 46th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, Anaheim, CA (US), 05/28/2002--05/31/2002

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  • Report No.: LBNL--49346
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 799568
  • Archival Resource Key: ark:/67531/metadc742258

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • May 31, 2002

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 5:50 p.m.

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Ngo, V.V.; Akker, B.; Leung, K.N.; Noh, I.; Scott, K.L. & Wilde, S. Demonstration of electronic pattern switching and 10x pattern demagnification in a maskless micro-ion beam reduction lithography system, article, May 31, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc742258/: accessed December 12, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.