Quantum confinement, carrier dynamics and interfacial processes in nanostructured direct/indirect-gap semiconductor-glass composites Page: 3 of 7
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REVIEW OF OBJECTIVES
AND PROGRESS OF RESEARCH
INTRODUCTION
Composite structures consisting of quantum confined semiconductor clusters embedded in a
transparent matrix have posed interesting and puzzling fundamental physics and materials
science problems as well as offering a number of potential high value applications. Regarding
the fundamental issues, we have observed changes in bandgap energy with cluster size which
do not adhere to conventional models at small crystal sizes [1] and appear to depend strongly
on whether the semiconductor is a 2-6 direct-gap type or a column 4 indirect-gap type. Here, we
have observed that composites doped with CdTe, CdS and CdSe in a silica matrix exhibit a
pronounced saturation of the predicted blue shift in bandgap energy with decreasing size [2]. By
contrast, composites with Si and Ge doped in a silica matrix which exhibit indirect-gap
transitions, continued to exhibit a large blue shift in bandgap energy with decreasing size. This
effect was so pronounced that Si- and Ge-doped composites have been fabricated that exhibit
bandgap energy transitions from the IR (corresponding to the bulk values) to the UV for crystal
sizes of the order of 42
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Simmons, Joseph H. Quantum confinement, carrier dynamics and interfacial processes in nanostructured direct/indirect-gap semiconductor-glass composites, report, August 13, 2002; United States. (https://digital.library.unt.edu/ark:/67531/metadc742165/m1/3/: accessed April 25, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.