Radiation tolerance of prototype BTeV pixel detector readout chips

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High energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is the state of the art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200 MeV proton beam at Indiana University Cyclotron Facility. Prototype pixel readout chip preFPIX2 has been developed at Fermilab for collider experiments and implemented in standard 0.25 ... continued below

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115 Kilobytes pages

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al., Gabriele Chiodini et July 12, 2002.

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High energy and nuclear physics experiments need tracking devices with increasing spatial precision and readout speed in the face of ever-higher track densities and increased radiation environments. The new generation of hybrid pixel detectors (arrays of silicon diodes bump bonded to arrays of front-end electronic cells) is the state of the art technology able to meet these challenges. We report on irradiation studies performed on BTeV pixel readout chip prototypes exposed to a 200 MeV proton beam at Indiana University Cyclotron Facility. Prototype pixel readout chip preFPIX2 has been developed at Fermilab for collider experiments and implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose up to 87 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been extensively measured.

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115 Kilobytes pages

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  • 2002 IEEE Nuclear and Space Radiation Effects Conference, Phoenix, AZ (US), 07/15/2002--07/19/2002

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  • Report No.: FERMILAB-Conf-02/147-E
  • Grant Number: AC02-76CH03000
  • Office of Scientific & Technical Information Report Number: 796948
  • Archival Resource Key: ark:/67531/metadc742120

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • July 12, 2002

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 1, 2016, 5:45 p.m.

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al., Gabriele Chiodini et. Radiation tolerance of prototype BTeV pixel detector readout chips, article, July 12, 2002; Batavia, Illinois. (digital.library.unt.edu/ark:/67531/metadc742120/: accessed October 19, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.