Indium nitride: A narrow gap semiconductor

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The optical properties of wurtzite InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. All these three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free electron concentration of the sample. The peak energy exhibits a very weak hydrostatic pressure dependence and a small, anomalous blueshift with increasing temperature. The bandgap energies of In-rich InGaN alloys were found to be consistent with the narrow ... continued below

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Wu, J.; Walukiewicz, W.; Yu, K.M.; Ager III, J.W.; Haller, E.E.; Lu, H. et al. August 14, 2002.

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The optical properties of wurtzite InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. All these three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free electron concentration of the sample. The peak energy exhibits a very weak hydrostatic pressure dependence and a small, anomalous blueshift with increasing temperature. The bandgap energies of In-rich InGaN alloys were found to be consistent with the narrow gap of InN. The bandgap bowing parameter was determined to be 1.43 eV in InGaN.

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OSTI as DE00803858

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  • 26th International Conference on the Physics of Semiconductors (ICPS-26), Edinburgh (GB), 07/29/2002--08/02/2002

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  • Report No.: LBNL--51320
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 803858
  • Archival Resource Key: ark:/67531/metadc741854

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  • August 14, 2002

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 1:16 p.m.

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Wu, J.; Walukiewicz, W.; Yu, K.M.; Ager III, J.W.; Haller, E.E.; Lu, H. et al. Indium nitride: A narrow gap semiconductor, article, August 14, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc741854/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.