New contact development for Si(Li) orthogonal-strip detectors

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At present, the contacts generally used for lithium-drifted silicon detectors consist of a diffused lithium layer (n-type) and a gold surface barrier (p-type). These contacts work well for unsegmented detectors. However, they both have disadvantages if used for segmented detectors. For this reason, we are developing new types of contacts that will be more robust and easier to segment. To replace the lithium n-type contact, we are using a thin layer of amorphous silicon (a-Si) with metalization on top. The new p-type contact consists of boron implanted into the silicon and annealed at the relatively low temperature of 500 degrees ... continued below

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Hau, Ionel D.; Tindall, Craig T. & Luke, Paul N. May 17, 2002.

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At present, the contacts generally used for lithium-drifted silicon detectors consist of a diffused lithium layer (n-type) and a gold surface barrier (p-type). These contacts work well for unsegmented detectors. However, they both have disadvantages if used for segmented detectors. For this reason, we are developing new types of contacts that will be more robust and easier to segment. To replace the lithium n-type contact, we are using a thin layer of amorphous silicon (a-Si) with metalization on top. The new p-type contact consists of boron implanted into the silicon and annealed at the relatively low temperature of 500 degrees C. The implantation and annealing is carried out as the first step in the process, prior to lithium drifting. Detectors have been fabricated using the new contacts both with and without a guard ring. They performed as well as detectors with standard contacts at operating temperatures between 80K and 240K. We will present data on the leakage current vs. temperature, isolation resistance between the guard ring and the center contact versus temperature and bias voltage, electronic noise and energy resolution versus temperature, as well as 57Co spectra.

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INIS; OSTI as DE00797850

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  • 10th Symposium on Radiation Measurements and Applications, Ann Arbor, MI (US), 05/21/2002--05/23/2002

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  • Report No.: LBNL--50350
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 797850
  • Archival Resource Key: ark:/67531/metadc741595

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • May 17, 2002

Added to The UNT Digital Library

  • Oct. 19, 2015, 7:39 p.m.

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  • Sept. 21, 2017, 6:56 p.m.

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Hau, Ionel D.; Tindall, Craig T. & Luke, Paul N. New contact development for Si(Li) orthogonal-strip detectors, article, May 17, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc741595/: accessed December 10, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.