Band anticrossing in highly mismatched semiconductor alloys

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The basic theoretical aspects of the band anticrossing effects in highly electronegativity-mismatched semiconductor alloys are reviewed. The many-impurity Anderson model treated in the coherent potential approximation is applied to the semiconductor alloys, in which metallic anion atoms are partially substituted by atoms of a highly electronegative element. Analytical solutions for the Green's function describe dispersion relations and state broadening effects for the restructured conduction band. The solutions are identical to those obtained from the physically intuitive and widely used two-level band anticrossing model. It is shown that the model explains key experimental observations including the unusual composition and pressure dependence ... continued below

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Walukiewicz, W. July 26, 2002.

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The basic theoretical aspects of the band anticrossing effects in highly electronegativity-mismatched semiconductor alloys are reviewed. The many-impurity Anderson model treated in the coherent potential approximation is applied to the semiconductor alloys, in which metallic anion atoms are partially substituted by atoms of a highly electronegative element. Analytical solutions for the Green's function describe dispersion relations and state broadening effects for the restructured conduction band. The solutions are identical to those obtained from the physically intuitive and widely used two-level band anticrossing model. It is shown that the model explains key experimental observations including the unusual composition and pressure dependence of the interband optical transitions and the large enhancement of the electron effective mass.

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OSTI as DE00803854

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  • 26th International Conference on the Physics of Semiconductors (ICPS-26), Edinburgh (GB), 07/29/2002--08/02/2002

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  • Report No.: LBNL--51164
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 803854
  • Archival Resource Key: ark:/67531/metadc741354

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  • July 26, 2002

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 3:56 p.m.

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Walukiewicz, W. Band anticrossing in highly mismatched semiconductor alloys, article, July 26, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc741354/: accessed August 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.