Single ion implantation for solid state quantum computer development

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Description

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for {sup 31}P{sup q+} ions. When {sup 31}P{sup q+} ions impinge on a wafer surface, their potential energy (9.3 keV for P{sup 15+}) is released, and about 20 secondary electrons are emitted. The ... continued below

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6 pages

Creation Information

Schenkel, Thomas; Meijers, Jan; Persaud, Arun; McDonald, Joseph W.; Holder, Joseph P. & Schneider, Dieter H. December 18, 2001.

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Description

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for {sup 31}P{sup q+} ions. When {sup 31}P{sup q+} ions impinge on a wafer surface, their potential energy (9.3 keV for P{sup 15+}) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

Physical Description

6 pages

Notes

INIS; OSTI as DE00791787

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  • SPIE's International Symposium on Integrated Optoelectronic Devices (OE24), San Jose, CA (US), 01/21/2002--01/25/2002

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  • Report No.: LBNL--48335
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 791787
  • Archival Resource Key: ark:/67531/metadc741236

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • December 18, 2001

Added to The UNT Digital Library

  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 2:26 p.m.

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Schenkel, Thomas; Meijers, Jan; Persaud, Arun; McDonald, Joseph W.; Holder, Joseph P. & Schneider, Dieter H. Single ion implantation for solid state quantum computer development, article, December 18, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc741236/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.