Thermodynamic limits to the maximum Curie temperature in Ga1-xMnxAs

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Using the ion channeling techniques we find that a substantial fraction (up to 15%) of the Mn atoms reside in interstitial sites in Ga{sub 1-x}Mn{sub x}As alloys (with x ranging from 0.02 to 0.09). Moreover, the T{sub C} of Ga{sub 1-x}Mn{sub x}As is found to be very sensitive to annealing at temperatures close to the growth temperature of 265 C. Ion channeling results demonstrate that the increase of TC after annealing at 282 C can be attributed to a relocation of Mn atoms from interstitial sites to form random clusters. A series of Ga{sub 1-x-y}Mn{sub x}Be{sub y}As layers, in which ... continued below

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Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Kuryliszyn, I.; Liu, X.; Sasaki, Y. et al. July 19, 2002.

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Using the ion channeling techniques we find that a substantial fraction (up to 15%) of the Mn atoms reside in interstitial sites in Ga{sub 1-x}Mn{sub x}As alloys (with x ranging from 0.02 to 0.09). Moreover, the T{sub C} of Ga{sub 1-x}Mn{sub x}As is found to be very sensitive to annealing at temperatures close to the growth temperature of 265 C. Ion channeling results demonstrate that the increase of TC after annealing at 282 C can be attributed to a relocation of Mn atoms from interstitial sites to form random clusters. A series of Ga{sub 1-x-y}Mn{sub x}Be{sub y}As layers, in which the magnetic moments and free holes are independently controlled by the Mn and Be contents, respectively, are also investigated. A dramatic increase of the concentration of Mn interstitials and a reduction of T{sub C} are observed as the Be concentration increases, while the free hole concentration stays relatively constant at {approx}5x10{sup 20}cm{sup -3}. These results demonstrate that the concentrations of free holes as well as uncompensated Mn spins are governed by the position of the Fermi level, which controls the formation energy of compensating interstitial Mn acceptors. This Fermi-level-induced hole saturation is responsible for the commonly observed upper limit of 110 K for the Curie temperature of this material system.

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OSTI as DE00803855

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  • 26th International Conference on the Physics of Semiconductors (ICPS-26), Edinburgh (GB), 07/29/2002--08/02/2002

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  • Report No.: LBNL--51165
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 803855
  • Archival Resource Key: ark:/67531/metadc741225

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  • July 19, 2002

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 2:37 p.m.

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Yu, K.M.; Walukiewicz, W.; Wojtowicz, T.; Kuryliszyn, I.; Liu, X.; Sasaki, Y. et al. Thermodynamic limits to the maximum Curie temperature in Ga1-xMnxAs, article, July 19, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc741225/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.