Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures Page: 1 of 17
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Dynamical x-ray microscopy investigation of electromigration
in passivated inlaid Cu interconnect structures
G. Schneider*, M.A. Meyerb, G. Denbeauxa, E. H. Andersona, B. Batesa, A. Pearsona
D. Hambach', E. A. Stachd, E. Zschechb
phone ++ 510 486 7052
FAX ++ 510 486 4955
a Center for X-ray Optics, Lawrence Berkeley National Laboratory, One Cyclotron Road
MS 2-400, Berkeley, CA 94720, USA
b AMD Saxony Manufacturing GmbH, P.O. Box 11 01 10, D-01330 Dresden, Germany
C Institut fur Rontgenphysik, Universitat Gottingen, Geiststral3e 11, D-37073
d National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, One
Cyclotron Road MS 72-150, Berkeley, CA 94720, USA
PACS numbers: 66.30.Qa, 85.40.Ls, 07.85.Tt, 42.30.Wb
Key words: X-ray microscopy, Cu interconnects, electromigration, mass transport
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Schneider, G.; Denbeaux, G.; Anderson, E.H.; Bates, B.; Pearson, A.L.; Meyer, M.A. et al. Dynamical x-ray microscopy investigation of electromigration in passivated inlaid Cu interconnect structures, article, April 26, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc740985/m1/1/: accessed May 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.