Hpvb and Hpvzm Shaped Growth of Cdznte, Cdse and Znse Crystals. Page: 1 of 12
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BNL-69260
HPVB and HPVZM shaped growth of CdZnTe, CdSe and ZnSe
crystals
N. N. Kolesnikov*, R. B. James+, N. S. Berzigiarova*, M. P. Kulakov*
(*) - Institute of Solid State Physics, Russian Academy of Sciences, Russia
(+) - Brookhaven National Laboratory, Upton, NY, USA
ABSTRACT
High-pressure Bridgman (HPVB) and vertical zone melting (HPVZM) growth processes have been applied for the
manufacturing of Cd1XZnXTe (x = 0.04 - 0.2), CdSe and ZnSe crystal tapes with sizes up to 120x 120x 12 mm. The
influences of the technological parameters describing the growth processes on the crystal quality and some selected
material properties are discussed. The dependence of the inclusion (bubbles) content on the deviation from melt
stoichiometry is determined. A method for growing plates with low content of inclusions is described. High-resistivity
crystal tapes of undoped CdZnTe (1010 Ohmxcm), CdSe (1011 Ohmxcm) and ZnSe (>1011 Ohmxcm) were prepared.
The possibility of tape growth on oriented seeds is shown for the example of CdSe. The primary differences between
HPVB and HPVZM results are described. The main HPVZM advantage for II-VI compound crystal growth is the
possibility of obtaining crystals with more stoichiometric composition or with a controlled deviation from
stoichiometry. Hence, HPVZM is preferable for growing high-resistivity II-VI crystals with low inclusion content and
possibly with better transport properties.
Keywords: Crystal growth, shaped crystal growth, ZnSe, CdSe, CdZnTe, CZT, HPVB, Bridgman, HPVZM, zone
melting, radiation detectors.
1. INTRODUCTION
Growth of bulk II-VI compound crystals is often carried out by the high-pressure vertical Bridgman method
(HPVB) or by means of vertical zone melting under high pressure of an inert gas (HPVZM). HPVB is the most widely
applied technique, especially for the manufacturing of CdTe and CdZnTe detector-grade crystals. At the same time
there is strong experimental evidence that HPVZM has distinct advantages compared to HPVB [1], because it allows
for better control of the main composition of the crystal. In particular, authors of Ref. [1] reported preparation of ZnSe
crystals with stoichiometric composition and with preset deviations from stoichiometry. It is relatively easy to grow
ZnSe from the melt because, due to a self-compensation, the crystals always have high specific resistivity (about 1012
Ohmxcm) and thus they are ready for many applications, such as IR optics and electrooptic modulators. Growth of
some other II-VI compound crystals, especially CdTe, CdSe, CdS and their mixtures, presents more difficulty. This is
because the specific resistivity of these materials tends to vary across avery wide range (1x101 - 1x1012 Ohmxcm) with
variations of the growth process parameters. In addition, the tellurides can easily change their conductivity type with
changing of the growth conditions.
This paper describes application of HPVB and HPVZM methods for CdZnTe, CdSe and ZnSe shaped crystal
growth. ZnSe was used as a model material, because its properties are the most studied among the II-VI compounds. In
addition, ZnSe is transparent in the visible spectral region and thus allows for a simple observation of many extended
defects, such as bubbles and other secondary phases, and their distribution.
The difference between HPVB and HPVZM results is described. An approach to grow bubble-free crystals is
discussed.
' Institute of Solid State Physics, Russian Acad. Sci., Chernogolovka, Moscow Distr., 142432 Russia.
Tel: 7-(096)-52-22074; Fax: 7-(096)-52-49701; nkolesnkissp.ac.ru
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Kolesnikov, N. N.; James, R. B.; Berzigiarova, N. S. & Kulakov, M. P. Hpvb and Hpvzm Shaped Growth of Cdznte, Cdse and Znse Crystals., article, July 7, 2002; Upton, New York. (https://digital.library.unt.edu/ark:/67531/metadc740077/m1/1/: accessed April 19, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.