Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth

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The goal of this project is to apply advanced computer-aided modeling techniques for simulating coupled radiation transfer present in the bulk growth of aluminum nitride (AlN) single-crystals. Producing and marketing high-quality single-crystals of AlN is currently the focus of Crystal IS, Inc., which is engaged in building a new generation of substrates for electronic and optical-electronic devices. Modeling and simulation of this company's proprietary innovative processing of AlN can substantially improve the understanding of physical phenomena, assist design, and reduce the cost and time of research activities. This collaborative work supported the goals of Crystal IS, Inc. in process scale-up ... continued below

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de Almeida, V.F. April 3, 2002.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 12 times . More information about this report can be viewed below.

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Description

The goal of this project is to apply advanced computer-aided modeling techniques for simulating coupled radiation transfer present in the bulk growth of aluminum nitride (AlN) single-crystals. Producing and marketing high-quality single-crystals of AlN is currently the focus of Crystal IS, Inc., which is engaged in building a new generation of substrates for electronic and optical-electronic devices. Modeling and simulation of this company's proprietary innovative processing of AlN can substantially improve the understanding of physical phenomena, assist design, and reduce the cost and time of research activities. This collaborative work supported the goals of Crystal IS, Inc. in process scale-up and fundamental analysis with promising computational tools.

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vp.

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  • Other Information: PBD: 3 Apr 2002

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  • Report No.: C/ORNL00-0587
  • Grant Number: AC05-00OR22725
  • DOI: 10.2172/814469 | External Link
  • Office of Scientific & Technical Information Report Number: 814469
  • Archival Resource Key: ark:/67531/metadc739874

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Office of Scientific & Technical Information Technical Reports

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  • April 3, 2002

Added to The UNT Digital Library

  • Oct. 18, 2015, 6:40 p.m.

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  • March 31, 2016, 1:13 p.m.

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de Almeida, V.F. Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth, report, April 3, 2002; United States. (digital.library.unt.edu/ark:/67531/metadc739874/: accessed May 27, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.