CuPt-type ordering of MOCVD In{sub 0.49}Al{sub 0.51}P.

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CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order ... continued below

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Kosel, T. H.; Hall, D. C.; Dupuis, R. D.; Heller, R. D. & Cook, R. E. March 14, 2002.

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CuPt-type ordering in In{sub 0.49}Al{sub 0.51}P is studied by TEM. The lattice-matched film was grown by MOCVD on a GaAs substrate oriented 10{sup o} off (001) towards [110], at 650 C and 25 nm/min. TEM [110] and [1{bar 1}0] cross-sections (XS) were made by wedge polishing and 2 kV Ar ion milling. In CuPt-type ordering of In{sub 0.52}Ga{sub 0.48}P, alternating In-Ga-In-Ga {l_brace}111{r_brace} planes of group III atoms produce 1/2 {bar 1}11 and 1/2 1{bar 1}1 order spots in the 110 SADP, while the [1{bar 1}0] SADP shows no order spots [1-3]. A few studies have reported this type of order in In{sub 0.49}Al{sub 0.51}P [4]. The 004 BF image of the [1{bar 1}0] XS in Fig. 1 shows uneven light/dark contrast modulation due to phase separation often observed in In{sub 0.52}Ga{sub 0.48}P. There are also light/dark layers marked ML parallel to the film growth plane; such unintentional multilayers have also been observed [5] but their origin is not understood. Order lamellae {approx}1.5 nm thick inclined at a shallow angle to the growth plane overlap the multilayer to produce Moire fringe contrast. Fig. 2 is a DF image showing the thin ordered domains in the [1{bar 1}0] XS, which are inclined at 12{sup o} to the growth plane and 2{sup o} to (001). Fig. 3a shows the absence of order spots in the [1{bar 1}0] SADP, while tilting 26.6{sup o} to [3{bar 1}0] reveals rows of order spots characteristic of CuPt ordering (Fig. 3b). The fact that the domains lie within {approx}2{sup o} of (001) shows that their orientation is crystallographically determined, while the fact that the ''multilayer'' is parallel to the growth plane rather than to (001) shows that it is not crystallographically determined. Most work does not describe domains in the [1{bar 1}0] XS, but Bellon et al. [1] commented that in a [1{bar 1}0] XS their In{sub 0.52}Ga{sub 0.48}P domains were exactly on (001) in a wafer 6{sup o} off (001) towards [110], consistent with our results. The domains and streaked order spots in our [1{bar 1}0] XS show no significant deviation from (001), but one set of spots is slightly tilted.

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  • Microscopy and Microanalysis, Quebec City, Quebec (CA), 08/04/2002--08/08/2002

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  • Report No.: ANL/MSD/CP-107065
  • Grant Number: W-31-109-ENG-38
  • Office of Scientific & Technical Information Report Number: 799825
  • Archival Resource Key: ark:/67531/metadc739517

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  • March 14, 2002

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  • Oct. 19, 2015, 7:39 p.m.

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  • March 11, 2016, 6:11 p.m.

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Kosel, T. H.; Hall, D. C.; Dupuis, R. D.; Heller, R. D. & Cook, R. E. CuPt-type ordering of MOCVD In{sub 0.49}Al{sub 0.51}P., article, March 14, 2002; Illinois. (digital.library.unt.edu/ark:/67531/metadc739517/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.