ADVANCED READOUT ELECTRONICS FOR MULTIELEMENT CdZnTe SENSORS.

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A generation of high performance front-end and read-out ASICs customized for highly segmented CdZnTe sensors is presented. The ASICs, developed in a multi-year effort at Brookhaven National Laboratory, are targeted to a wide range of applications including medical, safeguards/security, industrial, research, and spectroscopy. The front-end multichannel ASICs provide high accuracy low noise preamplification and filtering of signals, with versions for small and large area CdZnTe elements. They implement a high order unipolar or bipolar shaper, an innovative low noise continuous reset system with self-adapting capability to the wide range of detector leakage currents, a new system for stabilizing the output ... continued below

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7 pages

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DE GERONIMO,G.; O CONNOR,P.; KANDASAMY,A. & GROSHOLZ,J. July 8, 2002.

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Description

A generation of high performance front-end and read-out ASICs customized for highly segmented CdZnTe sensors is presented. The ASICs, developed in a multi-year effort at Brookhaven National Laboratory, are targeted to a wide range of applications including medical, safeguards/security, industrial, research, and spectroscopy. The front-end multichannel ASICs provide high accuracy low noise preamplification and filtering of signals, with versions for small and large area CdZnTe elements. They implement a high order unipolar or bipolar shaper, an innovative low noise continuous reset system with self-adapting capability to the wide range of detector leakage currents, a new system for stabilizing the output baseline and high output driving capability. The general-purpose versions include programmable gain and peaking time. The read-out multichannel ASICs provide fully data driven high accuracy amplitude and time measurements, multiplexing and time domain derandomization of the shaped pulses. They implement a fast arbitration scheme and an array of innovative two-phase offset-free rail-to-rail analog peak detectors for buffering and absorption of input rate fluctuations, thus greatly relaxing the rate requirement on the external ADC. Pulse amplitude, hit timing, pulse risetime, and channel address per processed pulse are available at the output in correspondence of an external readout request. Prototype chips have been fabricated in 0.5 and 0.35 {micro}m CMOS and tested. Design concepts and experimental results are discussed.

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7 pages

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  • SPIE ANNUAL MEETING, SEATTLE, WA (US), 07/08/2002--07/09/2002

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  • Report No.: BNL--69638
  • Grant Number: AC02-98CH10886
  • Office of Scientific & Technical Information Report Number: 808410
  • Archival Resource Key: ark:/67531/metadc739313

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • July 8, 2002

Added to The UNT Digital Library

  • Oct. 18, 2015, 6:40 p.m.

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  • Nov. 10, 2015, 1:21 p.m.

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DE GERONIMO,G.; O CONNOR,P.; KANDASAMY,A. & GROSHOLZ,J. ADVANCED READOUT ELECTRONICS FOR MULTIELEMENT CdZnTe SENSORS., article, July 8, 2002; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc739313/: accessed October 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.