Recombination Parameters for Antimonide-Based Semiconductors using RF Photoreflection Techniques

PDF Version Also Available for Download.

Description

RF photoreflection measurements and PC-1D simulations have been used to evaluate bulk and surface recombination parameters in antimonide-based materials. PC-1D is used to simulate the photoconductivity response of antimonide-based substrates and doubly-capped epitaxial layers and also to determine how to extract the recombination parameters using experimental results. Excellent agreement has been obtained with a first-order model and test structure simulation when Shockley-Reed-Hall (SRH) recombination is the bulk recombination process. When radiative, Auger and surface recombination are included, the simulation results show good agreement with the model. RF photoreflection measurements and simulations using PC-1D are compatible with a radiative recombination coefficient ... continued below

Physical Description

734 Kilobytes pages

Creation Information

Kumar, R.J.; Borrego, J.M.; Dutta, P.S.; Gutmann, R.J.; Wang, C.A.; Martinelli, R.U. et al. October 10, 2002.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

RF photoreflection measurements and PC-1D simulations have been used to evaluate bulk and surface recombination parameters in antimonide-based materials. PC-1D is used to simulate the photoconductivity response of antimonide-based substrates and doubly-capped epitaxial layers and also to determine how to extract the recombination parameters using experimental results. Excellent agreement has been obtained with a first-order model and test structure simulation when Shockley-Reed-Hall (SRH) recombination is the bulk recombination process. When radiative, Auger and surface recombination are included, the simulation results show good agreement with the model. RF photoreflection measurements and simulations using PC-1D are compatible with a radiative recombination coefficient (B) of approximately 5 x 10{sup -11} cm{sup 3}/s, Auger coefficient (C) {approx} 1.0 x 10{sup -28} cm{sup 6}/s and surface recombination velocity (SRV) {approx} 600 cm/s for 0.50-0.55 eV doubly-capped InGaAsSb material with GaSb capping layers using the experimentally determined active layer doping of 2 x 10{sup 17} cm{sup -3}. Photon recycling, neglected in the analysis and simulations presented, will affect the extracted recombination parameters to some extent.

Physical Description

734 Kilobytes pages

Notes

INIS; OSTI as DE00820721

Source

  • Other Information: PBD: 10 Oct 2002

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Report No.: LM-02K102
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/820721 | External Link
  • Office of Scientific & Technical Information Report Number: 820721
  • Archival Resource Key: ark:/67531/metadc738481

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • October 10, 2002

Added to The UNT Digital Library

  • Oct. 18, 2015, 6:40 p.m.

Description Last Updated

  • March 23, 2016, 12:56 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 3

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Kumar, R.J.; Borrego, J.M.; Dutta, P.S.; Gutmann, R.J.; Wang, C.A.; Martinelli, R.U. et al. Recombination Parameters for Antimonide-Based Semiconductors using RF Photoreflection Techniques, report, October 10, 2002; United States. (digital.library.unt.edu/ark:/67531/metadc738481/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.