Mutual passivation of group IV donors and isovalent nitrogen in diluted GaN{sub x}As{sub 1-x} alloys

PDF Version Also Available for Download.

Description

We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN{sub x}As{sub 1-x} alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV{sub Ga}-N{sub As} pairs. In Si doped GaInN{sub 0.017}As{sub 0.983} the electron concentration starts to decrease rapidly at an annealing temperature of 700 C from {approx} 3 x 10{sup 19}cm{sup -3} in the as-grown state to less than 10{sup 16}cm{sup -3} after an annealing at 900 C for 10 s. At the same time annealing of this sample at 950 C increases the gap ... continued below

Physical Description

13 pages

Creation Information

Yu, K.M.; Wu, J.; Walukiewicz, W.; Shan, W.; Beeman, J.; Mars, D.E. et al. July 23, 2003.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

We demonstrate the mutual passivation of electrically active group IV donors and isovalent N atoms in the GaN{sub x}As{sub 1-x} alloy system. This phenomenon occurs through the formation of a donor-nitrogen bond in the nearest neighbor IV{sub Ga}-N{sub As} pairs. In Si doped GaInN{sub 0.017}As{sub 0.983} the electron concentration starts to decrease rapidly at an annealing temperature of 700 C from {approx} 3 x 10{sup 19}cm{sup -3} in the as-grown state to less than 10{sup 16}cm{sup -3} after an annealing at 900 C for 10 s. At the same time annealing of this sample at 950 C increases the gap by about 35 meV, corresponding to a reduction of the concentration of the active N atoms by an amount very close to the total Si concentration. We also show that the formation of Si{sub Ga}-N{sub As} pairs is controlled by the diffusion of Si via Ga vacancies to the nearest N{sub As} site. The general nature of this mutual passivation effect is confirmed by our study of Ge doped GaN{sub x}As{sub 1-x} layers formed by N and Ge co-implantation in GaAs followed by pulsed laser melting.

Physical Description

13 pages

Notes

OSTI as DE00816786

Source

  • 22nd International Conference on Defects in Semiconductors, Aarhus (DK), 07/28/2003--08/01/2003

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL--53490
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 816786
  • Archival Resource Key: ark:/67531/metadc737888

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • July 23, 2003

Added to The UNT Digital Library

  • Oct. 18, 2015, 6:40 p.m.

Description Last Updated

  • April 4, 2016, 1:43 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Yu, K.M.; Wu, J.; Walukiewicz, W.; Shan, W.; Beeman, J.; Mars, D.E. et al. Mutual passivation of group IV donors and isovalent nitrogen in diluted GaN{sub x}As{sub 1-x} alloys, article, July 23, 2003; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc737888/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.