Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source Metadata

Metadata describes a digital item, providing (if known) such information as creator, publisher, contents, size, relationship to other resources, and more. Metadata may also contain "preservation" components that help us to maintain the integrity of digital files over time.

Title

  • Main Title Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

Creator

  • Author: Armitage, Rob
    Creator Type: Personal
  • Author: Yang, Qing
    Creator Type: Personal
  • Author: Feick, Henning
    Creator Type: Personal
  • Author: Park, Yeonjoon
    Creator Type: Personal
  • Author: Weber, Eicke R.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy. Office of Basic Energy Sciences.
    Contributor Type: Organization

Publisher

  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: Berkeley, California
    Additional Info: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (United States)

Date

  • Creation: 2002-04-15

Language

  • English

Description

  • Content Description: Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 10{sup 20} cm{sup -3}) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ({approx}6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.
  • Physical Description: vp.

Subject

  • Keyword: Optical Properties
  • Keyword: Luminescence
  • Keyword: Epitaxy
  • STI Subject Categories: 36 Materials Science
  • Keyword: Excitons
  • Keyword: Gan Carbon Doping
  • Keyword: Carbon Tetrachloride
  • Keyword: Carbon
  • Keyword: Photoluminescence Gan Carbon Doping

Source

  • Conference: Materials Research Society Spring Meeting, 2002, San Francisco, CA (US), 04/02/2002--04/05/2002

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: LBNL--52187
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 813570
  • Archival Resource Key: ark:/67531/metadc737787

Note

  • Display Note: OSTI as DE00813570