In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption

PDF Version Also Available for Download.

Description

The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated. HCL was used as the etchant, and in certain cases was followed by an additional etch in Br{sub 2}-HCl-HNO{sub 3}-CH{sub 3}COOH for comparison. Rinse comparisons included 2-propanol, methanol, and deionized water. Substrates were heated to either 525, 550, or 575 C. Features observed in the in-situ reflectance associated with the oxide desorption process ... continued below

Physical Description

657 Kilobytes pages

Creation Information

Vineis, C.J.; Wang, C.A. & Jensen, K.F. August 21, 2000.

Context

This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

Who

People and organizations associated with either the creation of this report or its content.

Sponsor

Publisher

  • Lockheed Martin
    Publisher Info: Lockheed Martin Corporation, Schenectady, NY 12301 (United States)
    Place of Publication: Schenectady, New York

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this report. Follow the links below to find similar items on the Digital Library.

Description

The use of specular reflectance to monitor GaSb substrate oxide desorption in-situ is reported. Substrates were loaded into the organometallic vapor phase epitaxy reactor either as-received (epi-ready) or after receiving a solvent degrease, acid etch and rinse. A variety of surface preparations and anneal conditions were investigated. HCL was used as the etchant, and in certain cases was followed by an additional etch in Br{sub 2}-HCl-HNO{sub 3}-CH{sub 3}COOH for comparison. Rinse comparisons included 2-propanol, methanol, and deionized water. Substrates were heated to either 525, 550, or 575 C. Features observed in the in-situ reflectance associated with the oxide desorption process were interpreted based on the starting oxide chemistry and thickness. Based on in-situ reflectance and ex-situ atomic force microscopy data, a recommendation on a reproducible GaSb substrate preparation technique suitable for high-quality epitaxial growth is suggested.

Physical Description

657 Kilobytes pages

Notes

OSTI as DE00821306

Source

  • Other Information: PBD: 21 Aug 2000

Language

Item Type

Identifier

Unique identifying numbers for this report in the Digital Library or other systems.

  • Report No.: LM-00K070
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/821306 | External Link
  • Office of Scientific & Technical Information Report Number: 821306
  • Archival Resource Key: ark:/67531/metadc737547

Collections

This report is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this report?

When

Dates and time periods associated with this report.

Creation Date

  • August 21, 2000

Added to The UNT Digital Library

  • Oct. 18, 2015, 6:40 p.m.

Description Last Updated

  • April 28, 2016, 8:51 p.m.

Usage Statistics

When was this report last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 10

Interact With This Report

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Vineis, C.J.; Wang, C.A. & Jensen, K.F. In-situ Reflectance Monitoring of GaSb Substrate Oxide Desorption, report, August 21, 2000; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc737547/: accessed October 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.