Radiation-Induced Prompt Photocurrents in Microelectronics: Physics

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Description

The effects of photocurrents in nuclear weapons induced by proximal nuclear detonations are well known and remain a serious hostile environment threat for the US stockpile. This report describes the final results of an LDRD study of the physical phenomena underlying prompt photocurrents in microelectronic devices and circuits. The goals of this project were to obtain an improved understanding of these phenomena, and to incorporate improved models of photocurrent effects into simulation codes to assist designers in meeting hostile radiation requirements with minimum build and test cycles. We have also developed a new capability on the ion microbeam accelerator in ... continued below

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41 pages

Creation Information

DODD, PAUL E.; VIZKELETHY, GYORGY; WALSH, DAVID S.; BULLER, DANIEL L.; DOYLE, BARNEY L. & BEEZHLD, WENDLAND January 1, 2003.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The effects of photocurrents in nuclear weapons induced by proximal nuclear detonations are well known and remain a serious hostile environment threat for the US stockpile. This report describes the final results of an LDRD study of the physical phenomena underlying prompt photocurrents in microelectronic devices and circuits. The goals of this project were to obtain an improved understanding of these phenomena, and to incorporate improved models of photocurrent effects into simulation codes to assist designers in meeting hostile radiation requirements with minimum build and test cycles. We have also developed a new capability on the ion microbeam accelerator in Sandia's Ion Beam Materials Research Laboratory (the Transient Radiation Microscope, or TRM) to supply ionizing radiation in selected micro-regions of a device. The dose rates achieved in this new facility approach those possible with conventional large-scale dose-rate sources at Sandia such as HERMES III and Saturn. It is now possible to test the physics and models in device physics simulators such as Davinci in ways not previously possible. We found that the physical models in Davinci are well suited to calculating prompt photocurrents in microelectronic devices, and that the TRM can reproduce results from conventional large-scale dose-rate sources in devices where the charge-collection depth is less than the range of the ions used in the TRM.

Physical Description

41 pages

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  • Other Information: PBD: 1 Jan 2003

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  • Report No.: SAND2003-0094
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/808617 | External Link
  • Office of Scientific & Technical Information Report Number: 808617
  • Archival Resource Key: ark:/67531/metadc736653

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • January 1, 2003

Added to The UNT Digital Library

  • Oct. 18, 2015, 6:40 p.m.

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  • April 11, 2016, 8:18 p.m.

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DODD, PAUL E.; VIZKELETHY, GYORGY; WALSH, DAVID S.; BULLER, DANIEL L.; DOYLE, BARNEY L. & BEEZHLD, WENDLAND. Radiation-Induced Prompt Photocurrents in Microelectronics: Physics, report, January 1, 2003; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc736653/: accessed October 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.