Screw dislocations in GaN Page: 3 of 3
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60th Ann. Proc. MSA, Quebec, Canada (2002).
dislocations in the same material might differ when the material is grown by different methods.
Studies are in progress to confirm this hypothesis by applying a direct reconstruction of the phase
and amplitude of the scattered electron wave from a focal series of high-resolution images [6].
[1]. S. Nakamura, M. Senoh, S. Nagahama, et al Appl. Phys. Lett. 72, 211 (1998).
[2]. R.J. Trew, M.W. Shin, and V. Gatto, Solid State Electr. 41, 1561 (1997).
[3] J. Jasinski and Z. Liliental-Weber, J. Electr. Mater. (2002) in press.
[4] Z. Liliental-Weber et al., Phys. Rev. Lett. 79, 2835 (1997)
[5] J.Elsner, R.Jones et al., Appl. Phys. Lett. 73, 3530 (1998)
[6] Work supported by the Director, Office of Science, Office of Basic Energy Sciences, Material
Sciences Division, of the U.S. Department of Energy, under contract No. DE-AC03-76SF00098.
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Liliental-Weber, Zuzanna; Jasinski, Jacek B.; Washburn, Jack & O'Keefe, Michael A. Screw dislocations in GaN, article, February 15, 2002; Berkeley, California. (https://digital.library.unt.edu/ark:/67531/metadc736547/m1/3/: accessed April 23, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.