A practical approach for modeling EUVL mask defects

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Description

An approximate method is proposed to calculate the EUV scattering from a defect within a multilayer coating. In this single surface approximation (SSA) the defective multilayer structure is replaced by a single reflecting surface with the shape of the top surface of the multilayer. The range of validity of this approximation has been investigated for Gaussian line defects using 2D finite-difference-time-domain simulations. The SSA is found to be valid for sufficiently low aspect ratio defects such as those expected for the critical defects nucleated by particles on the mask substrate. The critical EUVL defect size is calculated by combining the ... continued below

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15 pages

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Gullikson, E. M.; Cerjan, C.; Stearns, D. J.; Mirkarimi, P. B. & Sweeney, D. W. June 1, 2001.

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Description

An approximate method is proposed to calculate the EUV scattering from a defect within a multilayer coating. In this single surface approximation (SSA) the defective multilayer structure is replaced by a single reflecting surface with the shape of the top surface of the multilayer. The range of validity of this approximation has been investigated for Gaussian line defects using 2D finite-difference-time-domain simulations. The SSA is found to be valid for sufficiently low aspect ratio defects such as those expected for the critical defects nucleated by particles on the mask substrate. The critical EUVL defect size is calculated by combining the SSA with a multilayer growth model and aerial image simulations. Another approximate method for calculating the aerial image of an unresolved defect is also discussed. Although the critical substrate defects may be larger than the resolution of higher NA cameras, the point defect approximation provides a useful framework for understanding the printability of a wide range of defects.

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15 pages

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OSTI as DE00795446

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  • EIPBN 2001, Washington, DC (US), 05/29/2001--06/01/2001

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  • Report No.: LBNL--46806
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 795446
  • Archival Resource Key: ark:/67531/metadc736255

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  • June 1, 2001

Added to The UNT Digital Library

  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 3:33 p.m.

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Gullikson, E. M.; Cerjan, C.; Stearns, D. J.; Mirkarimi, P. B. & Sweeney, D. W. A practical approach for modeling EUVL mask defects, article, June 1, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc736255/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.