A CMOS Active Pixel Sensor for Charged Particle Detection

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Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. ... continued below

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6 pages

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Matis, Howard S.; Bieser, Fred; Kleinfelder, Stuart; Rai, Gulshan; Retiere, Fabrice; Ritter, Hans George et al. December 2, 2002.

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Description

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 {micro}m. Each array is divided into sub-arrays in which different sensor structures (4 in the first version and 16 in the second) and/or readout circuits are employed. Measurements of several of these structures under Fe{sup 55} exposure are reported. The sensors have also been irradiated by 55 MeV protons to test for radiation damage. The radiation increased the noise and reduced the signal. The noise can be explained by shot noise from the increased leakage current and the reduction in signal is due to charge being trapped in the epi layer. Nevertheless, the radiation effect is small for the expected exposures at RHIC and RHIC II. Finally, we describe our concept for mechanically supporting a thin silicon wafer in an actual detector.

Physical Description

6 pages

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INIS; OSTI as DE00810537

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  • Nuclear Science Symposium and Medical Imaging Conference, Norfolk, VA (US), 11/10/2002--11/16/2002

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  • Report No.: LBNL--51760
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 810537
  • Archival Resource Key: ark:/67531/metadc736091

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 2, 2002

Added to The UNT Digital Library

  • Oct. 18, 2015, 6:40 p.m.

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  • April 4, 2016, 12:26 p.m.

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Matis, Howard S.; Bieser, Fred; Kleinfelder, Stuart; Rai, Gulshan; Retiere, Fabrice; Ritter, Hans George et al. A CMOS Active Pixel Sensor for Charged Particle Detection, article, December 2, 2002; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc736091/: accessed December 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.