A Simple Single Step diffusion and Emitter Etching Process for High Efficiency Gallium Antimonide Thermophotovoltaic Devices

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A single step diffusion followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency GaSb thermophotovoltaic cells. The junction depth was controlled through monitoring of light current-voltage (I-V) curves (photovoltaic response) during the post diffusion emitter etching process. The measured photoresponses (prior to device fabrication) have been correlated with the quantum efficiencies and the open circuit voltages in the fabricated devices. An optimum junction depth for obtaining highest quantum efficiency and open circuit voltage is presented based on diffusion lengths (or monitoring carrier lifetimes), carrier mobility and typical diffused impurity ... continued below

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417 Kilobytes pages

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Rajagopalan, G.; Reddy, N.S.; Ehsani, E.; Bhat, I.B.; Dutta, P.S.; Gutmann, R.J. et al. August 29, 2003.

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Description

A single step diffusion followed by precise etching of the diffused layer has been developed to obtain a diffusion profile appropriate for high efficiency GaSb thermophotovoltaic cells. The junction depth was controlled through monitoring of light current-voltage (I-V) curves (photovoltaic response) during the post diffusion emitter etching process. The measured photoresponses (prior to device fabrication) have been correlated with the quantum efficiencies and the open circuit voltages in the fabricated devices. An optimum junction depth for obtaining highest quantum efficiency and open circuit voltage is presented based on diffusion lengths (or monitoring carrier lifetimes), carrier mobility and typical diffused impurity profile in GaSb.

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417 Kilobytes pages

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OSTI as DE00820719

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  • Other Information: PBD: 29 Aug 2003

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  • Report No.: LM-02K072
  • Grant Number: AC12-00SN39357
  • DOI: 10.2172/820719 | External Link
  • Office of Scientific & Technical Information Report Number: 820719
  • Archival Resource Key: ark:/67531/metadc736086

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  • August 29, 2003

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  • Oct. 18, 2015, 6:40 p.m.

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  • March 28, 2016, 9:07 p.m.

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Rajagopalan, G.; Reddy, N.S.; Ehsani, E.; Bhat, I.B.; Dutta, P.S.; Gutmann, R.J. et al. A Simple Single Step diffusion and Emitter Etching Process for High Efficiency Gallium Antimonide Thermophotovoltaic Devices, report, August 29, 2003; United States. (digital.library.unt.edu/ark:/67531/metadc736086/: accessed September 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.