Measurement of the indium segregation in InGaN based LEDs with single atom sensitivity

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In light emitting diodes (LED) consisting of GaN/InGaN/GaN quantum wells (QWs), the exact indium distribution inside the wells of the active region affects the performance of devices. Indium segregation can take place forming small InGaN clusters of locally varying composition. In the past, we used a local strain analysis from single HRTEM lattice images to determine the In composition inside the InGaN QWs with a resolution of 0.5 nm x 0.3 nm. Truly atomic resolution can be pursued by exploitation of intensity dependencies on the atomic number (Z) of the electron exit-wave (EW). In microscopes with sufficient sensitivity, local variations ... continued below

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Jinschek, Joerg; Kisielowski, Christian; Van Dyck, Dirk & Geuens, Philippe July 30, 2003.

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In light emitting diodes (LED) consisting of GaN/InGaN/GaN quantum wells (QWs), the exact indium distribution inside the wells of the active region affects the performance of devices. Indium segregation can take place forming small InGaN clusters of locally varying composition. In the past, we used a local strain analysis from single HRTEM lattice images to determine the In composition inside the InGaN QWs with a resolution of 0.5 nm x 0.3 nm. Truly atomic resolution can be pursued by exploitation of intensity dependencies on the atomic number (Z) of the electron exit-wave (EW). In microscopes with sufficient sensitivity, local variations of amplitude and phase are found to be discrete with sample thickness, which allows for counting the number of atoms in each individual column of {approx}0.08 nm diameter. In QW s of {approx}17 percent of average indium concentration it is possible to discriminate between pure Ga columns and columns containing 1, 2, 3, or more In atoms because phase changes are discrete and element specific. The preparation of samples with atomically flat surfaces is a limiting factor for the application of the procedure.

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INIS; OSTI as DE00816078

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  • SPIE International Symposium on Optical Science and Technology, San Diego, CA (US), 08/03/2003--08/08/2003

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  • Report No.: LBNL--53706
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 816078
  • Archival Resource Key: ark:/67531/metadc734219

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • July 30, 2003

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  • Oct. 18, 2015, 6:40 p.m.

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  • April 4, 2016, 1:36 p.m.

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Jinschek, Joerg; Kisielowski, Christian; Van Dyck, Dirk & Geuens, Philippe. Measurement of the indium segregation in InGaN based LEDs with single atom sensitivity, article, July 30, 2003; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc734219/: accessed November 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.