Performance Limits of Low Bandgap Thermophotovoltaic Antimonide-Based Cells for Low Temperature Radiators Page: 6 of 11
This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided to UNT Digital Library by the UNT Libraries Government Documents Department.
Extracted Text
The following text was automatically extracted from the image on this page using optical character recognition software:
SIMULATION RESULTS FOR GaSb AND GaInSb TPV CELLS
Figure 3 shows the internal and external quantum efficiency, as well as the
reflectance, of a GaInSb TPV cell with an energy bandgap of 0.55 eV using
PC-iD to simulate the performance of the cell. The low internal QE at short
wavelengths is caused by the high recombination in the heavily doped emitter. At
longer wavelengths, the internal QE does not rise above 70% because of the long
base and short diffusion length. Minority carrier's photogenerated in the base
may diffuse toward the junction and be collected or they diffuse away from the
junction and are lost by bulk recombination that is predominantly Auger
recombination.
100
a2
C3 80
Internal QE
oZ
z~ 60-
W LUUExternal QE
U0 40
wz
-J
z 20 Reflectance
CE
1000 1500 2000 2500
WAVELENGTH (nm )
FIGURE 3. Simulation of Internal and External QE of GaInSb (0.55 eV) Celf.
Besides the above simulations, we have determined the maximum power
output performance of the Zn diffused cells as function of radiator temperature.
The maximum power as function of Black Body radiator temperature for the
several Zn diffused GaSb and GaInSb TPV cells is shown in Fig.4.
Figure 4. shows that in spite of the low radiator temperatures, the GaSb TPV
cell always produces the largest output power. The reason for this surprising
result is that the Auger recombination coefficients increase exponentially as the
band gap decreases which causes an exponential increase in the dark current and a
large decrease in the open circuit voltage. The increase in short circuit current
with decreasing band gap does not compensate for the large decrease in open
circuit voltage. In order to increase the performance of the low band gap GaInSb
Upcoming Pages
Here’s what’s next.
Search Inside
This report can be searched. Note: Results may vary based on the legibility of text within the document.
Tools / Downloads
Get a copy of this page or view the extracted text.
Citing and Sharing
Basic information for referencing this web page. We also provide extended guidance on usage rights, references, copying or embedding.
Reference the current page of this Report.
Borrego, J. M.; Wang, C. A.; Dutta, P. S.; Rajagopalan, G.; Bhat, I. B.; Gutmann, R. J. et al. Performance Limits of Low Bandgap Thermophotovoltaic Antimonide-Based Cells for Low Temperature Radiators, report, August 29, 2000; United States. (https://digital.library.unt.edu/ark:/67531/metadc733857/m1/6/: accessed April 24, 2024), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.