Performance Limits of Low Bandgap Thermophotovoltaic Antimonide-Based Cells for Low Temperature Radiators Page: 2 of 11
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LmY 02<0U7 C
Performance Limits of Low Bandgap Thermophotovoltaic
Antimonide-Based Cells for Low Temperature Radiators
J.M. Borrego 1, C.A.Wang3. P.S. Dutta , G.Rajagopalan', R.J. Gutmann 1,2.
I.B Bhat 1, H. Ehsani 4, J.F.Beausang4, G. Nichols 4 and P.F. Baldasaro ;
Center for Integrated Electronics and Electronics Manufacturing
2 Department of Electrical, Computer and Systems Engineering
Rensselaer Polytechnic Institute, Troy, NY- 12180
3 Lincoln Laboratories,Massachusetts Istitute of Technology. Lexington, MA -02420
4Lockheed Martin Inc., Schenectady, NY- 12301
Abstract. This paper assesses the performance of antimonide-based thermophotovoltaic
cells fabricated by different technologies. In particular, the paper compares the
performance of lattice matched quaternary (GaInAsSb) cells epitaxially grown on GaSb
substrates to the performance of ternary (GaInSb) and binary (GaSb) cells fabricated by Zn
diffusion on bulk substrates. The focus of the paper is to delineate the key performance
advantages of the highest performance-to-date of the quaternary cells to the performance of
the alternative ternary and binary antimonide-based diffusion technology. The performance
characteristics of the cells considered are obtained from PC-1D simulations using
appropriate material parameters.
In order for Thermophotovoltaic (TPV) cells to be commercially viable it is
necessary that they can be fabricated by processes that give cells with relatively
good performance and with reproducible characteristics in semiconductor
materials with energy band gaps in the range between 0.7 eV and 0.5 eV. At the
present time the following fabrication process are being used when the material
used is Sb based: molecular beam epitaxy (MBE), organometallic vapor phase
epitaxy OMVPE and bulk diffusion. Recent work in our laboratory has shown
that it is possible to fabricate GaSb and ternary GaInSb TPV cells in which the
material has been grown by a Bridgman type technique and then the cell emitter is
obtained by low temperature Zn diffusion. This fabrication process is inexpensive
and has shown to produce cells with very reproducible characteristics. MBE and
OMVPE are complex fabrication processes that have the advantage of giving cells
in which the physical structure and the doping concentration of the material in
several regions can be tailored to achieve high performance cells. It is the purpose
of this paper to present the results of computer simulations using PC-1D of the
performance of Zn bulk diffused GaSb and GaInSb TPV cells and compare them
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Borrego, J.M.; Wang, C.A.; Dutta, P.S.; rajagopalan, G.; Bhat, I.B.; Gutmann, R.J. et al. Performance Limits of Low Bandgap Thermophotovoltaic Antimonide-Based Cells for Low Temperature Radiators, report, August 29, 2000; United States. (digital.library.unt.edu/ark:/67531/metadc733857/m1/2/: accessed July 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.