Band anticrossing in highly mismatched group II-VI semiconductor alloys

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We have successfully synthesized highly mismatched Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys by high dose implantation of O ions into Cd{sub 1-y}Mn{sub y}Te crystals. In crystals with y > 0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd{sub 0.38}Mn{sub 0.62}Te. The results are consistent with the band anticrossing model which predicts that a repulsive interaction between localized states of O located above the conduction band edge and the extended states of the conduction band causes the band gap reduction. A ... continued below

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Yu, K.M.; Wu, J.; Walukiewicz, W.; Beeman, J.W.; Ager, J.W.; Haller, E.E. et al. October 3, 2001.

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We have successfully synthesized highly mismatched Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys by high dose implantation of O ions into Cd{sub 1-y}Mn{sub y}Te crystals. In crystals with y > 0.02, incorporation of O causes a large decrease in the band gap. The band gap reduction increases with y; the largest value observed is 190 meV in O-implanted Cd{sub 0.38}Mn{sub 0.62}Te. The results are consistent with the band anticrossing model which predicts that a repulsive interaction between localized states of O located above the conduction band edge and the extended states of the conduction band causes the band gap reduction. A best fit of the measured band gap energies of the O ion synthesized Cd{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys using the band anticrossing model for y < 0.55 suggests an activation efficiency of only {approx}5% for implanted O in Cd{sub 1-y}Mn{sub y}Te.

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OSTI as DE00803853

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  • U.S. Workshop on the Physics and Chemistry of II-VI Materials, Kissimmee, FL (US), 10/03/2001--10/05/2001

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  • Report No.: LBNL--51121
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 803853
  • Archival Resource Key: ark:/67531/metadc733831

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  • October 3, 2001

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  • Oct. 19, 2015, 7:39 p.m.

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  • April 4, 2016, 12:20 p.m.

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Yu, K.M.; Wu, J.; Walukiewicz, W.; Beeman, J.W.; Ager, J.W.; Haller, E.E. et al. Band anticrossing in highly mismatched group II-VI semiconductor alloys, article, October 3, 2001; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc733831/: accessed October 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.