Effects of structural defects on the activation of sulfur donors in GaN/x/As/1-x/ formed by N implantation Metadata

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Title

  • Main Title Effects of structural defects on the activation of sulfur donors in GaN/x/As/1-x/ formed by N implantation

Creator

  • Author: Jasinski, J.
    Creator Type: Personal
  • Author: Yu, K.M.
    Creator Type: Personal
  • Author: Walukiewicz, W.
    Creator Type: Personal
  • Author: Liliental-Weber, Z.
    Creator Type: Personal
  • Author: Washburn, J.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy. Division of Materials Sciences.
    Contributor Type: Organization
    Contributor Info: USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (United States)

Publisher

  • Name: Lawrence Berkeley National Laboratory
    Place of Publication: California
    Additional Info: Lawrence Berkeley National Lab., CA (United States)

Date

  • Creation: 2001-07-16

Language

  • English

Description

  • Content Description: The effects of structural defects on the electrical activity of S doped GaN{sub x}As{sub 1-x} layers formed by S and N coimplantation in GaAs are reported. S and N ions were implanted to the depth of about 0.4 {micro}m. Electrochemical capacitance voltage measurements on samples annealed at 945 C for 10s show that in a thin (<0.1 {micro}m) surface layer the concentration of active shallow donors is almost an order of magnitude larger in S and N co-implanted samples than in samples implanted with S alone. The activation efficiency of S donors also shows a broad minimum at a depth of about 0.2 {micro}m below the surface. The results of these electrical measurements are correlated with the distribution of structural defects revealed by transmission electron microscopy (TEM). The TEM micrographs show that in addition to a band of dislocation loops commonly found in ion implanted GaAs, an additional band of small voids is observed in samples co-implanted with S and N. The location of this band correlates well with the region of reduced electrical activation of S donors, suggesting that formation of the voids through N accumulation results in a lower concentration of active, substitutional N atoms.
  • Physical Description: 10 pages

Subject

  • Keyword: Gallium Nitrides
  • Keyword: Ion Implantation
  • STI Subject Categories: 36 Materials Science
  • Keyword: Crystal Defects
  • Keyword: Dislocations
  • Keyword: Doped Materials
  • Keyword: Capacitance
  • Keyword: Nitrogen
  • Keyword: Sulfur
  • Keyword: Electrical Properties
  • Keyword: Gallium Arsenides

Source

  • Conference: 21st International Conference on Defects in Semiconductors, Giessen (DE), 07/16/2001--07/20/2001

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: LBNL--48916
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 787171
  • Archival Resource Key: ark:/67531/metadc725427

Note

  • Display Note: INIS; OSTI as DE00787171
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