Nano-precipitation in hot-pressed silicon carbide

PDF Version Also Available for Download.

Description

Heat treatments at 1300 degrees C, 1400 degrees C, 1500 degrees C, and 1600 degrees C in Ar were found to produce nanoscale precipitates in hot-pressed silicon carbide containing aluminum, boron, and carbon sintering additives (ABC-SiC). The precipitates were studied by transmission electron microscopy (TEM) and nano-probe energy-dispersive X-ray spectroscopy (nEDS). The precipitates were plate-like in shape, with a thickness, length and separation of only a few nanometers, and their size coarsened with increasing annealing temperature, accompanied by reduced number density. The distribution of the precipitates was uniform inside the SiC grains, but depleted zones were observed in the vicinity ... continued below

Physical Description

vp.

Creation Information

Zhang, Xiao Feng; Sixta, Mark E.; Chen, Da & De Jonghe, Lutgard C. May 16, 2000.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Heat treatments at 1300 degrees C, 1400 degrees C, 1500 degrees C, and 1600 degrees C in Ar were found to produce nanoscale precipitates in hot-pressed silicon carbide containing aluminum, boron, and carbon sintering additives (ABC-SiC). The precipitates were studied by transmission electron microscopy (TEM) and nano-probe energy-dispersive X-ray spectroscopy (nEDS). The precipitates were plate-like in shape, with a thickness, length and separation of only a few nanometers, and their size coarsened with increasing annealing temperature, accompanied by reduced number density. The distribution of the precipitates was uniform inside the SiC grains, but depleted zones were observed in the vicinity of the SiC grain boundaries. A coherent orientation relationship between the precipitates and the SiC matrix was found. Combined high-resolution electron microscopy, computer simulation, and nEDS identified an Al4C3-based structure and composition for the nano-precipitates. Most Al ions in SiC lattice exsolved as precipitates during the annealing at 1400 to 1500 degrees C. Formation mechanism and possible influences of the nanoscale precipitates on mechanical properties are discussed.

Physical Description

vp.

Source

  • Journal Name: Journal of Materials Science; Journal Volume: 36; Journal Issue: 22; Other Information: Journal Publication Date: Nov. 2001

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LBNL--46447
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 789123
  • Archival Resource Key: ark:/67531/metadc724894

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 16, 2000

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

Description Last Updated

  • April 4, 2016, 1:43 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 5

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Zhang, Xiao Feng; Sixta, Mark E.; Chen, Da & De Jonghe, Lutgard C. Nano-precipitation in hot-pressed silicon carbide, article, May 16, 2000; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc724894/: accessed August 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.