Effects of He{sup +} ion implantation on optical and structural properties of MgAl{sub 2}O{sub 4}

PDF Version Also Available for Download.

Description

Single crystals of magnesium-aluminate spinel were implanted with 170 keV He{sup +} ions to fluences ranging from 1 x 10{sup 16}--1 x 10{sup 21} ions/m{sup 2} at 120 K. The effects of ion implantation were studied using optical absorption spectroscopy, Rutherford Backscattering Spectroscopy and Ion Channeling (RBS/C) and Transmission Electron Microscopy (TEM). In absorption spectra obtained from the implanted samples, growth of an F-center band at 5.3 eV was observed. At the fluence of 3 x 10{sup 20} ions/m{sup 2}, the growth of this band not only ceases but the intensity suddenly decreases. This may be due to formation of ... continued below

Physical Description

Medium: P; Size: vp.

Creation Information

Afanasyev-Charkin, I. V.; Cooke, D. W.; Gritsyna, V. T.; Ishimaru, M. & Sickafus, K. E. May 25, 1999.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Single crystals of magnesium-aluminate spinel were implanted with 170 keV He{sup +} ions to fluences ranging from 1 x 10{sup 16}--1 x 10{sup 21} ions/m{sup 2} at 120 K. The effects of ion implantation were studied using optical absorption spectroscopy, Rutherford Backscattering Spectroscopy and Ion Channeling (RBS/C) and Transmission Electron Microscopy (TEM). In absorption spectra obtained from the implanted samples, growth of an F-center band at 5.3 eV was observed. At the fluence of 3 x 10{sup 20} ions/m{sup 2}, the growth of this band not only ceases but the intensity suddenly decreases. This may be due to formation of a new phase at this fluence. This is partially confirmed by the fact that beginning at this dose, a modulated absorbance becomes apparent in the absorption spectrum of spinel. This effect is caused by formation of a buried layer with refraction index lower than that of an unimplanted sample. RBS/C and TEM measurements show that spinel is not amorphized over the fluence range examined in this study. TEM microdiffraction observations show that in the damaged region the intensities of superlattice spots decrease significantly, suggesting that ion beam irradiation induces either an order-disorder phase transition or a transformation into the so-called ``metastable'' phase of spinel.

Physical Description

Medium: P; Size: vp.

Notes

INIS; OSTI as DE00760526

Source

  • Third International Conference on Modification of Properties of Surface Layers of Non-Semiconducting Materials Using Particle Beams, Sumy (UA), 05/25/1999--05/29/1999

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: LA-UR-99-2639
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 760526
  • Archival Resource Key: ark:/67531/metadc724649

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • May 25, 1999

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

Description Last Updated

  • Feb. 29, 2016, 2:17 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 2

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Afanasyev-Charkin, I. V.; Cooke, D. W.; Gritsyna, V. T.; Ishimaru, M. & Sickafus, K. E. Effects of He{sup +} ion implantation on optical and structural properties of MgAl{sub 2}O{sub 4}, article, May 25, 1999; New Mexico. (digital.library.unt.edu/ark:/67531/metadc724649/: accessed December 13, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.