We demonstrate that the insertion of low-temperature (LT) AlGaN interlayers is effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks during growth of AlGaN directly upon GaN epilayers., Stress evolution and relaxation is monitored using an in-situ optical stress sensor. The combination of in-situ and ex-situ. characterization techniques enables us to determine the degree of pseudomorphism in the interlayers. It is observed that the elastic tensile mismatch between AlGaN and GaN is mediated by the relaxation of interlayers; the use of interlayers offers tunability in the in-plane lattice parameters.
Publisher Info:
Sandia National Labs., Albuquerque, NM, and Livermore, CA
Place of Publication:
Albuquerque, New Mexico
Provided By
UNT Libraries Government Documents Department
Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.
Descriptive information to help identify this article.
Follow the links below to find similar items on the Digital Library.
Description
We demonstrate that the insertion of low-temperature (LT) AlGaN interlayers is effective in reducing mismatch-induced tensile stress and suppressing the formation of cracks during growth of AlGaN directly upon GaN epilayers., Stress evolution and relaxation is monitored using an in-situ optical stress sensor. The combination of in-situ and ex-situ. characterization techniques enables us to determine the degree of pseudomorphism in the interlayers. It is observed that the elastic tensile mismatch between AlGaN and GaN is mediated by the relaxation of interlayers; the use of interlayers offers tunability in the in-plane lattice parameters.
This article is part of the following collection of related materials.
Office of Scientific & Technical Information Technical Reports
Reports, articles and other documents harvested from the Office of Scientific and Technical Information.
Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.
Han, Jung; Waldrip, Karen Nmn; Lee, Stephen R.; Figiel, Jeffrey J.; Hearne, S. J.; Petersen, Gary A. et al.Control and Elimination of Cracking of AlGaN Using Low-Temperature AlGaN Interlayers,
article,
September 13, 2000;
Albuquerque, New Mexico.
(https://digital.library.unt.edu/ark:/67531/metadc724589/:
accessed April 25, 2024),
University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.
