Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures Metadata

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  • Main Title Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures


    Creator Type: Personal
  • Author: LACOE,RONALD C.
    Creator Type: Personal
    Creator Type: Personal
  • Author: MAYER,DONALD C.
    Creator Type: Personal
  • Author: SCHWANK,JAMES R.
    Creator Type: Personal
  • Author: WINOKUR,PETER S.
    Creator Type: Personal


  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: US Department of Energy (United States)


  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico
    Additional Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)


  • Creation: 2000-08-15


  • English


  • Content Description: Metal-oxide-silicon capacitors fabricated in a bi-polar process were examined for densities of oxide trapped charge, interface traps and deactivated substrate acceptors following high-dose-rate irradiation at 100 C. Acceptor neutralization near the Si surface occurs most efficiently for small irradiation biases in depletion. The bias dependence is consistent with compensation and passivation mechanisms involving the drift of H{sup +} ions in the oxide and Si layers and the availability of holes in the Si depletion region. Capacitor data from unbiased irradiations were used to simulate the impact of acceptor neutralization on the current gain of an npn bipolar transistor. Neutralized acceptors near the base surface enhance current gain degradation associated with radiation-induced oxide trapped charge and interface traps by increasing base recombination. The additional recombination results from the convergence of carrier concentrations in the base and increased sensitivity of the base to oxide trapped charge. The enhanced gain degradation is moderated by increased electron injection from the emitter. These results suggest that acceptor neutralization may enhance radiation-induced degradation of linear circuits at elevated temperatures.
  • Physical Description: 8 p.


  • Keyword: Irradiation
  • Keyword: Recombination
  • STI Subject Categories: 36 Materials Science
  • Keyword: Capacitors
  • Keyword: Passivation
  • Keyword: Sensitivity
  • Keyword: Oxides
  • Keyword: Electrons
  • Keyword: Substrates
  • Keyword: Availability
  • Keyword: Convergence


  • Journal Name: IEEE Transactions on Nuclear Science; Other Information: Submitted to IEEE Transactions on Nuclear Science


  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI


  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article


  • Text


  • Report No.: SAND2000-2062J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 760748
  • Archival Resource Key: ark:/67531/metadc723495


  • Display Note: OSTI as DE00760748
  • Display Note: Medium: P; Size: 8 pages