Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures

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Metal-oxide-silicon capacitors fabricated in a bi-polar process were examined for densities of oxide trapped charge, interface traps and deactivated substrate acceptors following high-dose-rate irradiation at 100 C. Acceptor neutralization near the Si surface occurs most efficiently for small irradiation biases in depletion. The bias dependence is consistent with compensation and passivation mechanisms involving the drift of H{sup +} ions in the oxide and Si layers and the availability of holes in the Si depletion region. Capacitor data from unbiased irradiations were used to simulate the impact of acceptor neutralization on the current gain of an npn bipolar transistor. Neutralized acceptors ... continued below

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8 p.

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WITCZAK,STEVEN C.; LACOE,RONALD C.; SHANEYFELT,MARTY R.; MAYER,DONALD C.; SCHWANK,JAMES R. & WINOKUR,PETER S. August 15, 2000.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Metal-oxide-silicon capacitors fabricated in a bi-polar process were examined for densities of oxide trapped charge, interface traps and deactivated substrate acceptors following high-dose-rate irradiation at 100 C. Acceptor neutralization near the Si surface occurs most efficiently for small irradiation biases in depletion. The bias dependence is consistent with compensation and passivation mechanisms involving the drift of H{sup +} ions in the oxide and Si layers and the availability of holes in the Si depletion region. Capacitor data from unbiased irradiations were used to simulate the impact of acceptor neutralization on the current gain of an npn bipolar transistor. Neutralized acceptors near the base surface enhance current gain degradation associated with radiation-induced oxide trapped charge and interface traps by increasing base recombination. The additional recombination results from the convergence of carrier concentrations in the base and increased sensitivity of the base to oxide trapped charge. The enhanced gain degradation is moderated by increased electron injection from the emitter. These results suggest that acceptor neutralization may enhance radiation-induced degradation of linear circuits at elevated temperatures.

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8 p.

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OSTI as DE00760748

Medium: P; Size: 8 pages

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  • Journal Name: IEEE Transactions on Nuclear Science; Other Information: Submitted to IEEE Transactions on Nuclear Science

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  • Report No.: SAND2000-2062J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 760748
  • Archival Resource Key: ark:/67531/metadc723495

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  • August 15, 2000

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

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  • April 11, 2017, 6:37 p.m.

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WITCZAK,STEVEN C.; LACOE,RONALD C.; SHANEYFELT,MARTY R.; MAYER,DONALD C.; SCHWANK,JAMES R. & WINOKUR,PETER S. Field Dependent Dopant Deactivation in Bipolar Devices at Elevated irradiation Temperatures, article, August 15, 2000; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc723495/: accessed November 15, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.