P-type doping of GaN

PDF Version Also Available for Download.

Description

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. ... continued below

Physical Description

Medium: P; Size: 96 pages

Creation Information

Wong, R.K. April 10, 2000.

Context

This thesis or dissertation is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 60 times . More information about this document can be viewed below.

Who

People and organizations associated with either the creation of this thesis or dissertation or its content.

Author

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this thesis or dissertation. Follow the links below to find similar items on the Digital Library.

Description

After implantation of As, As + Be, and As + Ga into GaN and annealing for short durations at temperatures as high as 1500 C, the GaN films remained highly resistive. It was apparent from c-RBS studies that although implantation damage did not create an amorphous layer in the GaN film, annealing at 1500 C did not provide enough energy to completely recover the radiation damage. Disorder recovered significantly after annealing at temperatures up to 1500 C, but not completely. From SIMS analysis, oxygen contamination in the AIN capping layer causes oxygen diffusion into the GaN film above 1400 C. The sapphire substrate (A1203) also decomposed and oxygen penetrated into the backside of the GaN layer above 1400 C. To prevent donor-like oxygen impurities from the capping layer and the substrate from contaminating the GaN film and compensating acceptors, post-implantation annealing should be done at temperatures below 1500 C. Oxygen in the cap could be reduced by growing the AIN cap on the GaN layer after the GaN growth run or by depositing the AIN layer in a ultra high vacuum (UHV) system post-growth to minimize residual oxygen and water contamination. With longer annealing times at 1400 C or at higher temperatures with a higher quality AIN, the implantation drainage may fully recover.

Physical Description

Medium: P; Size: 96 pages

Notes

INIS; OSTI as DE00764386

Source

  • Other Information: TH: Thesis (M.S.); Submitted to University of California, Berkeley, CA 94720 (US)

Language

Identifier

Unique identifying numbers for this document in the Digital Library or other systems.

  • Report No.: LBNL--45553
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 764386
  • Archival Resource Key: ark:/67531/metadc723058

Collections

This document is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this thesis or dissertation?

When

Dates and time periods associated with this thesis or dissertation.

Creation Date

  • April 10, 2000

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

Description Last Updated

  • April 4, 2016, 6:42 p.m.

Usage Statistics

When was this document last used?

Yesterday: 0
Past 30 days: 1
Total Uses: 60

Interact With This Thesis Or Dissertation

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Wong, R.K. P-type doping of GaN, thesis or dissertation, April 10, 2000; California. (digital.library.unt.edu/ark:/67531/metadc723058/: accessed November 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.