A Mechanism for Enhanced Low-Dose-Rate Sensitivity of Bipolar Transistors Metadata

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Title

  • Main Title A Mechanism for Enhanced Low-Dose-Rate Sensitivity of Bipolar Transistors

Creator

  • Author: Hjalmarson, Harold P.
    Creator Type: Personal
  • Author: Witczak, Steven C.
    Creator Type: Personal
  • Author: Schultz, Peter A.
    Creator Type: Personal
  • Author: Bowman, Duane J.
    Creator Type: Personal
  • Author: Fleetwood, Daniel M.
    Creator Type: Personal

Contributor

  • Sponsor: United States. Department of Energy.
    Contributor Type: Organization
    Contributor Info: US Department of Energy (United States)

Publisher

  • Name: Sandia National Laboratories
    Place of Publication: Albuquerque, New Mexico
    Additional Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)

Date

  • Creation: 2000-09-26

Language

  • English

Description

  • Physical Description: 8 p.

Subject

  • STI Subject Categories: 46 Instrumentation Related To Nuclear Science And Technology
  • Keyword: Silicon Oxides
  • Keyword: Sensitivity
  • Keyword: Radiation Effects
  • Keyword: Silicon Dioxide
  • Keyword: Hydrogen Radiolysis Mechanism
  • Keyword: Transistors
  • Keyword: Low Dose Reate Effect
  • Keyword: Radiation Effects Silicon Dioxide

Source

  • Journal Name: IEEE Transactions on Nuclear Science; Other Information: Submitted to IEEE Transactions on Nuclear Science

Collection

  • Name: Office of Scientific & Technical Information Technical Reports
    Code: OSTI

Institution

  • Name: UNT Libraries Government Documents Department
    Code: UNTGD

Resource Type

  • Article

Format

  • Text

Identifier

  • Report No.: SAND2000-2376J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 764044
  • Archival Resource Key: ark:/67531/metadc722960

Note

  • Display Note: INIS; OSTI as DE00764044
  • Display Note: Medium: P; Size: 8 pages
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