Influence of low temperature-grown GaAs on lateral thermal oxidation of Al{sub 0.98}Ga{sub 0.02}As

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The lateral thermal oxidation process of Al{sub 0.98}Ga{sub 0.02}As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al{sub 0.98}Ga{sub 0.02}As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a ... continued below

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Ferrer, J.C.; Liliental-Weber, Z.; Reese, H.; Chiu, Y.J. & Hu, E. June 29, 2000.

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The lateral thermal oxidation process of Al{sub 0.98}Ga{sub 0.02}As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al{sub 0.98}Ga{sub 0.02}As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a SiO{sub 2} cap layer is also discussed.

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OSTI as DE00775136

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  • 2000 Materials Research Society Spring Meeting, San Francisco, CA (US), 04/24/2000--04/28/2000

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  • Report No.: LBNL--45983
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 775136
  • Archival Resource Key: ark:/67531/metadc722712

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  • June 29, 2000

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  • Sept. 29, 2015, 5:31 a.m.

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  • April 5, 2016, 1:24 p.m.

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Ferrer, J.C.; Liliental-Weber, Z.; Reese, H.; Chiu, Y.J. & Hu, E. Influence of low temperature-grown GaAs on lateral thermal oxidation of Al{sub 0.98}Ga{sub 0.02}As, article, June 29, 2000; California. (digital.library.unt.edu/ark:/67531/metadc722712/: accessed September 21, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.