Spectroscopic study of partially-ordered semiconductor heterojunction under high pressure and high magnetic field

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Description

Photoluminescence upconversion (PLU) is a phenomenon in which a sample emits photons with energy higher than that of the excitation photon. This effect has been observed in many materials including rare earth ions doped in insulating hosts and semiconductor heterostructures without using high power lasers as the excitation source. Recently, this effect has been observed also in partially CuPt-ordered GaInP{sub 2} epilayers grown on GaAs substrates. As a spectroscopic technique photoluminescence upconversion is particularly well suited for studying band alignment at heterojunction interface. The value of band-offset has been determined with meV precision using magneto-photoluminescence. Using the fact that the ... continued below

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13 pages

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Yu, P.Y.; Martinez, G.; Zeman, J. & Uchida, K. December 31, 2000.

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Description

Photoluminescence upconversion (PLU) is a phenomenon in which a sample emits photons with energy higher than that of the excitation photon. This effect has been observed in many materials including rare earth ions doped in insulating hosts and semiconductor heterostructures without using high power lasers as the excitation source. Recently, this effect has been observed also in partially CuPt-ordered GaInP{sub 2} epilayers grown on GaAs substrates. As a spectroscopic technique photoluminescence upconversion is particularly well suited for studying band alignment at heterojunction interface. The value of band-offset has been determined with meV precision using magneto-photoluminescence. Using the fact that the pressure coefficient of electrons in GaAs is higher than those in GaInP{sub 2} they have been able to manipulate the band-offset at the GaInP/GaAs interface. By converting the band-offset from Type I to Type II they were able to demonstrate that the efficiency of the upconversion process is greatly enhanced by a Type II band-offset.

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13 pages

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OSTI as DE00788070

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  • Application of Spectroscopic Techniques on High Tc Superconducting, Colossal Magnetoresistance and Superlattice Materials, Kunming (CN), 08/27/2000--08/30/2000

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  • Report No.: LBNL--48891
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 788070
  • Archival Resource Key: ark:/67531/metadc721513

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  • December 31, 2000

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  • Sept. 29, 2015, 5:31 a.m.

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  • April 4, 2016, 2:27 p.m.

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Yu, P.Y.; Martinez, G.; Zeman, J. & Uchida, K. Spectroscopic study of partially-ordered semiconductor heterojunction under high pressure and high magnetic field, article, December 31, 2000; Berkeley, California. (digital.library.unt.edu/ark:/67531/metadc721513/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.