Diffusion Resistant, High-Purity Wafer Carriers For SI Semiconductor Production

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Description

The Cooperative Research and Development Agreement (CRADA) was directed towards development of diffusion resistant, high-purity wafer carriers for Si semiconductor production with improved properties compared to current materials. The determination of the infiltration behavior is important for controlling the fabrication process to. obtain consistent high-quality products. Ammonium molybdate or molybdenum carbide were found to be suitable as a precursor to produce SiC-MoSi{sub 2}-Si composites by Si infiltration into carbon preforms. Experiments on the pyrolysis of the preforms showed variable infiltration behavior by the molten Si (within the range of conditions in the present study). Further research is required to reproducibly ... continued below

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15 pages

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Tiegs, T.N. & Leaskey, L. October 1, 2000.

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Description

The Cooperative Research and Development Agreement (CRADA) was directed towards development of diffusion resistant, high-purity wafer carriers for Si semiconductor production with improved properties compared to current materials. The determination of the infiltration behavior is important for controlling the fabrication process to. obtain consistent high-quality products. Ammonium molybdate or molybdenum carbide were found to be suitable as a precursor to produce SiC-MoSi{sub 2}-Si composites by Si infiltration into carbon preforms. Experiments on the pyrolysis of the preforms showed variable infiltration behavior by the molten Si (within the range of conditions in the present study). Further research is required to reproducibly and consistently fabricate flaw-free articles. The strength of the composites fabricated to-date was 325{+-}124 MPa, which is higher than current commercial products. Better process control should result in higher average strengths and reduce the variability.

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15 pages

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OSTI as DE00769361

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  • Other Information: PBD: 1 Oct 2000

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  • Report No.: C/ORNL98-0538
  • Report No.: ORNL98-0538
  • Grant Number: AC05-00OR22725
  • DOI: 10.2172/769361 | External Link
  • Office of Scientific & Technical Information Report Number: 769361
  • Archival Resource Key: ark:/67531/metadc721421

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  • October 1, 2000

Added to The UNT Digital Library

  • Sept. 29, 2015, 5:31 a.m.

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  • Jan. 21, 2016, 7:52 p.m.

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Tiegs, T.N. & Leaskey, L. Diffusion Resistant, High-Purity Wafer Carriers For SI Semiconductor Production, report, October 1, 2000; Tennessee. (digital.library.unt.edu/ark:/67531/metadc721421/: accessed August 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.