Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

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We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10{sup {minus}4}{Omega}cm{sup 2}, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based metallization, and determined the optimum processing conditions (temperature and gas ambient) for fabrication of low resistance ohmic contacts. When the process is conducted in N{sub 2} flow, the metallization remains stable at temperatures required to achieve the ohmic behavior, and the morphology of the metal/semiconductor interface is unaltered by such ... continued below

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4 pages; OS: OS 8.0

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Kaminska, E.; Piotrowska, A.; Barcz, A.; Bour, D.; Zielinski, M. & Jasinski, J. November 27, 2000.

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We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10{sup {minus}4}{Omega}cm{sup 2}, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based metallization, and determined the optimum processing conditions (temperature and gas ambient) for fabrication of low resistance ohmic contacts. When the process is conducted in N{sub 2} flow, the metallization remains stable at temperatures required to achieve the ohmic behavior, and the morphology of the metal/semiconductor interface is unaltered by such a heat treatment. The processing in O{sub 2}, on the contrary, causes the interdiffusion of metallization constituents and the incorporation of oxygen into the semiconductor subcontact region, which could be responsible for increased resistivity of these contacts.

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4 pages; OS: OS 8.0

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OSTI as DE00772145

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  • E-MRS 2000 Meeting, Strasbourg (FR), 05/30/2000--06/02/2000

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  • Report No.: LBNL--46981
  • Grant Number: AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 772145
  • Archival Resource Key: ark:/67531/metadc721420

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  • November 27, 2000

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  • Sept. 29, 2015, 5:31 a.m.

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  • April 5, 2016, 1:22 p.m.

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Kaminska, E.; Piotrowska, A.; Barcz, A.; Bour, D.; Zielinski, M. & Jasinski, J. Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg, article, November 27, 2000; California. (digital.library.unt.edu/ark:/67531/metadc721420/: accessed September 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.